What are GaN Power Devices

GaN (Gallium Nitride) is a compound semiconductor material used to create high-performance power devices known as GaN HEMTs (High Electron Mobility Transistors).
Compared to silicon, which is currently the mainstream semiconductor material, GaN power devices are characterized by low conduction loss (low ON resistance) and excellent high-speed switching performance, meeting market demands for improved power conversion efficiency and miniaturization.
SiC (Silicon Carbide) power devices provide superior efficiency at high voltages, while GaN HEMTs are gaining traction high-frequency, medium voltage applications.
At the same time, to maximize the performance of GaN HEMTs, we offer power stage ICs that combine GaN HEMTs and gate driver ICs into a single package. And products that add a control IC are being considered
GaN HEMTs are used in a variety of applications, including communication base stations, server power supplies for data centers, industrial equipment motors, and AC adapters.

Differentiating between Si, GaN, and SiC transistors.

The power capacity and operating frequency range of power devices can vary greatly depending on the choice of materials (Si/GaN/SiC) and structural design.
While Si has traditionally been the dominant semiconductor material, emerging market demands for high-frequency operation and high-power capabilities have sparked interest in GaN and SiC.
Characterized a wider bandgap than silicon (Si), gallium nitride (GaN) and silicon carbide (SiC) feature superior properties in terms of breakdown voltage, thermal conductivity, and electron mobility, making them ideally suited for operation in high temperature, current, voltage, and frequency environments required by semiconductor applications.
In addition, while SiC MOSFETs exhibit excellent characteristics in high voltage, high current regions, GaN HEMTs demonstrate superior breakdown strength and electron mobility in the medium voltage range, enabling low ON-resistance and fast (high frequency) switching.
As a result, GaN HEMTs are increasingly being used for high-frequency, medium voltage applications.

Application Miniaturization

The high-speed switching capabilities of GaN HEMTs makes it possible to replace large components such as coils and transformers used in power and motor circuits with smaller alternatives, contributing to reducing the size and weight of power supplies.
For example, AC adapters equipped with GaN HEMTs can be designed to be more compact than their Si MOSFET counterparts.