SiC Schottky Barrier Diodes
The total capacitive charge (Qc) of Schottky barrier diodes (SBD) is small, reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes where the trr (reverse recovery time) increases along with temperature, silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance.
Like other SiC devices, SiC SBDs allow manufacturers to reduce the size of industrial equipment and consumer electronics, making them ideal for use inpower-factor correction circuits and inverters.
And as they make power-conversion systems more reliable, they are routinely found in battery chargers, charging circuits for electric and hybrid vehicles, and in solar panels, where the newest generation of SiC devices can reduce power loss by up to 50 percent.
Other applications for low-heat generating SiC is in high-voltage equipment, such as X-ray machines.
ROHM has released the SCS3 Series of 3rd generation SiC SBDs that offers greater surge current capability while further reducing the industry’s smallest forward voltage of its 2nd generation SBDs.