Silicon-carbide (SiC) Power Devices
Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design complexity.
ROHM is at the forefront in the development of SiC power devices and modules that offer improved power-savings in applications across a number of industries.
SiC Technology Applications:
- High-efficiency inverters in DC/AC converters for solar and wind power
- Power converters for electric and hybrid vehicles
- Power inverters for industrial equipment and air conditioners
- High-voltage switches for X-ray generators
- Thin-film coating processes
ROHM SiC Products
ROHM’s broad portfolio includes SiC Schottky barrier diodes (SBDs), SiC MOSFETs, full SiC power modules (integrating SiC SBDs and MOSFETs), and high heat-resistance power modules. These compact and efficient semiconductor devices have the potential to substantially reduce end-product size.
Industry-leading SiC Power and Gate Driver Solutions
Learn more about silicon carbide semiconductors and why they are the most promising material for use in power electronics due to the inherent advantages that SiC has over other materials.
Their lower loss, higher withstand voltage, faster switching capability, and superior thermal characteristics enable simpler designs that are more efficient, smaller, and lighter than silicon-based alternatives.
The total capacitive charge (Qc) of Schottky barrier diodes (SBDs) is small, reducing switching loss while enabling high-speed switching operation. In addition, unlike silicon-based fast recovery diodes where the trr increases with the temperature, silicon carbide devices maintain constant characteristics, resulting in better performance.
SiC Schottky barrier diodes make power-conversion systems more reliable, so they are used in battery chargers, solar panels for renewable energy, and electric vehicle charging stations.
Silicon carbide is a low-heat generating material, allowing manufacturers to reduce the overall size of power supply systems. For example, the Kinki Roentgen company's 500-watt power supply for X-ray generators utilizes ROHM SiC SBDs to reduce the volume per watt by five times compared to older systems.
Evaluation boards are available for ROHM SiC SBDs, compatible with a variety of power supply topologies (Buck/Boost/Half Bridge).
Read about the 500W Output Power Supply for an X-Ray Generator that utilizes SiC technology to increase efficiency and reduce system size through low heat generation.
Learn more about Silicon Carbide SiC Schottky Barrier Diodes (SBD) and why they offer superior dynamic and thermal performance over conventional Silicon power diodes.
SiC MOSFETs eliminate tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON-resistance increases and provides greater package miniaturization and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.
The SiC MOSFET attributes are especially valuable in medical imaging equipment. Its nearly instantaneous switching abilities enable manufacturers to build high-voltage switches for X-ray machines that allow technicians to better control radiation exposure during tests yet still produce quality results.
In manufacturing, the ROHM SCT2080KE MOSFET improves the efficiency of pulse generators by delivering a steep rise time that increases productivity.
Read about the general-purpose high voltage SiC Pulser that improves thin-film coating processes and the Experimental Tool for SiC Drive and Evaluation designed to verify the responsiveness and loss of SiC devices in product development process.
Learn more about SiC MOSFETs and why they exhibit higher blocking voltage, lower ON state resistance and higher thermal conductivity than their silicon counterparts.
Integrating SiC MOSFETs and SBDs into full-SiC power modules, compared to conventional IGBT modules, significantly reduces switching loss. These new ROHM SiC modules make high-frequency operation above 100 kHz possible. This improves efficiency in industrial equipment such as high-frequency power supplies for induction heating and hybrid-power storage systems.
A ROHM SiC power module helps the Kurita Seisakusho high-power pulse plasma generator deliver a reaction field up to 200kHz to better support customer requirements, a feat made possible only with SiC.
Drive boards and snubber modules are available with ROHM’s BSM Series of SiC Power Modules.
Read about the High Frequency Power Supply for induction heating that is used as a heat source for material development and production, or the Submerged Pulse Plasma Generator that enables a pulsed plasma frequency of 200kHz. ROHMs SiC Power modules have also been used in hybrid power storage systems.
Learn more about SiC power modules which transform electrical power with high conversion efficiency and minimize switching loss.
SiC Schottky Barrier Diodes have many useful applications, from rectification, signal conditioning and switching to TTL and CMOS logic gate,s mainly due to their low power and fast switching speeds.
Please contact us for specifications and purchase information. We do not sell bare die SiC Schottky Barrier Diode products through internet distributors.
ROHMs Bare Die MOSFETs are used in advanced power electronics circuits to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices.
Please contact us for specifications and purchase information. We do not sell bare die SiC MOSFET products through internet distributors.