Silicon-carbide (SiC) Power Devices

Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design complexity.

ROHM is at the forefront in the development of SiC power devices and modules that offer improved power-savings in applications across a number of industries.

SiC Technology Applications:

  • High-efficiency inverters in DC/AC converters for solar and wind power
  • Power converters for electric and hybrid vehicles
  • Power inverters for industrial equipment and air conditioners
  • High-voltage switches for X-ray generators
  • Thin-film coating processes

ROHM SiC Products

ROHM’s broad portfolio includes SiC Schottky barrier diodes (SBDs), SiC MOSFETs, full SiC power modules (integrating SiC SBDs and MOSFETs), and high heat-resistance power modules. These compact and efficient semiconductor devices have the potential to substantially reduce end-product size.

Industry-leading SiC Power and Gate Driver Solutions

Learn more about silicon carbide semiconductors and why they are the most promising material for use in power electronics due to the inherent advantages that SiC has over other materials.

Their lower loss, higher withstand voltage, faster switching capability, and superior thermal characteristics enable simpler designs that are more efficient, smaller, and lighter than silicon-based alternatives.