
Evaluation boards make it easy to evaluate ROHMs broad portfolio of SiC Schottky barrier diodes (SBD's), SiC MOSFET's, full SiC power modules (which integrate SiC SBDs and MOSFETs), and high heat resistance power modules.
These compact and efficient semiconductor devices have the potential to substantially reduce end-product size, and when coupled with an evaluation board, can also be used to help prototype applications and initiate set development.
Evaluation Board Lineup
Category | SiC Product | Image | Part No. | Maker | Product Details | User Guide | Purchase Board | |
---|---|---|---|---|---|---|---|---|
SiC-MOS | Evaluation Board |
SCT4XXX series Trench(4th Generation) TO-247-N | ![]() |
NEW P04SCT4018KE-EVK-001 |
ROHM | Details | User Guide Product Specification |
Online Distributors |
SCT4XXX series Trench(4th Generation) TO-247-4L | ![]() |
NEW P05SCT4018KR-EVK-001 |
Online Distributors | |||||
SCT3XXX series Trench(3G) TO-247 3L/4L | ![]() |
P02SCT3040KR-EVK-001 | Details | User Guide Product Specification |
Online Distributors | |||
SiC Module | Drive board | BSM series Planar (2G)(1200V, E / G type) | ![]() |
BSMGD2G12D24-EVK001 | - | User Guide | Inquire | |
BSM series Trench(3G/4G) (1200V,E/G type) | BSMGD3G12D24-EVK001 | - | User Guide | Inquire | ||||
BSM series (1200V,C type) | ![]() |
BSMGD3C12D24-EVK001 | - | User Guide | Inquire | |||
BSM series (1700V,E type) | ![]() |
BSMGD2G17D24-EVK001 | User Guide | Inquire | ||||
BSM series (1200V,1700V E/G type) | ![]() |
2EG-B series | TAMURA | Tamura Manufacturing’s Website | ||||
Snubber Module | BSM series (1200V, C type) | ![]() |
MGSM1D72J2-145MH26 | ROHM | - | Inquire | ||
BSM series (1200V, E / G type) | MGSM1D72J2-145MH16 | - | ||||||
BSM250 (1700V, E type) | MGSM1D72J3-934MH93 | - | ||||||
AC/DC | Evaluation Board | SCT2H12NZ | ![]() |
BD7682FJ-LB-EVK-402 | ROHM | Details | Application Note | Online Distributors |
Evaluation Board Overview
P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001
P04SCT4018KE-EVK-001 / P05SCT4018KR-EVK-001 are evaluation boards that enable evaluation of 4th generation SiC MOSFETs in TO-247N / TO-247-4L packages. It is equipped with a gate driver and peripheral circuits to reduce man-hours for design and evaluation.

P02SCT3040KR-EVK-001
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier - In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
- Single power supply (+12V operation)
- Supports double pulse testing up to 150A and switching up to 500kHz
- Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
- Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
- Jumper pins enable switching between negative bias/zero bias for gate drive
- Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms

AC/DC Converter Control IC Evaluation Board with Built-In 1700V SiC MOSFET
Optimized for use with auxiliary power supplies in high-power industrial equipment, this evaluation board integrates ROHM’s AC/DC converter control IC for SiC drive and 1700V SiC MOSFET.
BD7682FJ-LB-EVK-402
- AC/DC evaluation board with SiC MOSFET drive (flyback converter)
- Incorporates ROHM's SCT2H12NZ 1700V SiC MOSFET
- Includes ROHM's BD7682FJ-LB AC/DC converter control IC
- 3-phase 400 to 690VAC input, 24V/1A output

Application Note
- Basics and Design Guidelines for Gate Drive Circuits
- Notes for Temperature Measurement Using Forward Voltage of PN Junction
- Two-Resistor Model for Thermal Simulation
- Method for Monitoring Switching Waveform
- How to Use Thermal Models
- What is a Thermal Model?
- Precautions During Gate-Source Voltage Measurement
- Improving Switching Loss by Driver Source
- Snubber Circuit Design Methods for SiC MOSFETs
- Gate-Source Voltage Surge Suppression Methods
- Gate-Source Voltage Behavior in a Bridge Configuration
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