ROHM SiC DeviceApplication Examples
The following application examples demonstrate the greater efficiency and energy savings that can be achieved utilizing SiC power devices. For inquiries or additional information about the products on this page, please visit the website of the individual customer/company in question.
General Purpose Power Supplies
Kinki Roentgen Industrial Co., Ltd.General Purpose Power Supplies
National Research and Development Corp.
Japan Science and Technology Agency: Research Results of Deployment Program (Super Cluster Program) Support Project
SiC dramatically reduces size - 5x smaller! 500W Output
Power Supply for X-Ray Generator
Overview
This general-purpose power supply system for X-ray generators adopts SiC Schottky barrier diodes to significantly increase efficiency and reduce system size through low-heat generation.
Results
Utilizing SiC decreases power loss by more than 2%. What’s more, ROHM SiC SBDs contribute to the miniaturization of external components and cooling mechanisms, making it possible to reduce the power supply volume per watt by 5x compared with conventional systems. This translates to significantly lower power consumption and requires less space vs conventional (non-SiC) systems.
Induction Heating
Nissin Giken Co., Ltd.Induction Heating
National Research and Development Corp.
Japan Science and Technology Agency: Research Results of Deployment Program (Super Cluster Program) Support Project
Achieves complete cooling • Conversion efficiency improved 10% 5kW/10kW/15kW
Output High-Frequency Power Supply
NET-5S/NET-10S/NET-15S
Overview
Leveraging the characteristics of SiC allows these high frequency power modules to improve efficiency, facilitating the switch to air cooling to eliminate problems associated with water, such as deterioration due to aging, significantly extending product life.
Results
・ Conversion efficiency increased by an average of 10% (vs Si IGBT)
・ Achieves complete air cooling (waterless)
・ Reduces processing time with a metal dissolver
Pulse Power Supply
Fukushima SiC Applied Giken Co., Ltd.Pulse Power Supply
National Research and Development Corp.
Japan Science and Technology Agency: Research Results of Deployment Program (Super Cluster Program) Support Project
Achieves steep rise time (30 to 50ns) even with high-voltage pulses (100kV) 100kV/240A Peak Output
Bipolar Pulse Generator (SiC Pulser)SiC-Pulser
Overview
Incorporating SiC MOSFETs into the design allows this general-purpose high-voltage pulse generator to deliver a steep pulse rise that improves productivity and quality in applications such as thin-film coating processes.
Results
Adopting SiC enables a rise time of 30 to 50ns - even with high-voltage pulses on the order of 100kV - while ensuring system stability.
Kurita Seisakusho Co., Ltd.Pulse Power Supply
Japanese Science and Technology Agency's Super Cluster Program
Pulsed plasma frequency of 200kHz achieved by leveraging the high-frequency characteristics of SiC 1kW Output
Submerged Pulse Plasma Generator1kW Output Desktop MPP-HV04SiC Desktop MPP-HV84SiC
Overview
Adopting an SiC power device module enables designers to create a generator that can produce a pulsed plasma frequency of 200 kilohertz.
Results
Controlling the chemical reaction of plasma requires manipulation of pulses in the sub-μ to several μs range. Taking advantage of the capabilities of ROHM’s SiC modules makes it possible to achieve consistent ultra-short plasma pulses in the sub-μ region that was difficult to achieve with Si IGBTs.
ROHM Products Used
Kurita Seisakusho Co., Ltd.Pulse Power Supply
Japanese Science and Technology Agency's Super Cluster Program
High-power plasma generator provides customized support from 30kHz to 300kHz 3kW Output Model
Submerged Pulse Plasma GeneratorStandard MPP-HV*Series SiC
Overview
Provides a high-power plasma reaction field from the conventional 30kHz region to 200kHz, made possible only through SiC. Enables customized support matched to user requirements, i.e., high power, 300kHz.
Results
Leveraging the high-temperature characteristics of SiC power devices successfully improves overload tolerance, even in short-circuit mode that often occurs on the plasma-load side. This tolerance for high-temperature operation improves overall system efficiency.
ROHM Products Used
IKS Co., Ltd.Energy
National Research and Development Corp. Japan Science and Technology Agency: Research Results of Deployment Program (Super Cluster Program) Support Project
SiC power module reduces power loss by more than 40%10kW Hybrid Power Storage Systems I_DENCON 10kW
Overview
This micro smart-grid system connects to the DC bus of power supplies such as storage batteries, generators, and PV*/EV* chargers and dischargers, enabling optimized input/output control that reduces power loss by up to 70% compared to current commercial products.
*PV: Photovoltaic (solar) power generation system
*EV: Electric vehicle
Results
In this application example, adopting SiC power modules reduces power loss by over 40% compared to conventional Si devices, even when used in just the converter block.
IKS Co., Ltd.Energy
SiC power module reduces power loss by more than 40% 50kW Hybrid Power Storage SystemI_DENCON 50kW
Overview
This micro smart-grid system connects to the DC bus of power supplies such as storage batteries, generators, and PV*/EV* chargers and dischargers, enabling optimized input/output control that reduces power loss by up to 70% compared to current commercial products.
*PV: Photovoltaic (solar) power generation system
*EV: Electric vehicle
Results
In this application example, adopting SiC power modules reduces power loss by over 40% compared to conventional Si devices, even when used in just the converter block.
50kW Hybrid Power Storage System(®MSEG)
ROHM Products Used
SiC Drive Tools
Headspring Inc.SiC Drive Tools
Compact experimental tool makes it easy to evaluate and drive SiC devices Experimental Tool for SiC Drive and Evaluation
Circuit Block for Power Electronics (HGCB-2A-401350)
Overview
Experimental equipment for driving and evaluating SiC devices. This tool verifies the responsiveness and loss of SiC devices in the upstream processes of product development, such as R&D or the function prototyping phase.
Results
The compact form factor with integrated SiC MOSFET can fit in the palm of your hand. It packs a whopping 7.0kW of power, enabling high-speed switching of SiC devices up to 200kHz. In addition, the versatile design can be combined with the company's controllers.
Tamura Manufacturing Co., Ltd.SiC Drive Tools
Low common mode・High-speed responseGate Driver Unit2EG-B series
Overview
This is a dedicated gate drive unit for SiC-MOSFET. It has a built-in DC-DC converter and two dedicated drive circuits, making it possible to mount directly above the SiC power module.
Results
You can easily drive SiC power modules without designing. Various protection circuits such as DESAT function, soft turn-off function, Miller clamp function are built in. Since the gate resistor is not assembled, please be assembled it before operation.
