GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties over silicon devices, such as excellent high-frequency characteristics.
Due to its higher switching characteristics and lower ON resistance than silicon devices, GaN devices are expected to contribute to lower power consumption and greater miniaturization of various power supplies and the miniaturization of peripheral components.
ROHM succeeded to increase the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V, making them ideal for use in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices.
ROHM 650V GaN HEMT have achieved the industry's highest class FOM (Figure of Merit), which offers great switching losses reduction compared to conventional GaN devices and contributes to higher efficiency in a wide range of power supply systems.
ROHM continues to improve device performance through its EcoGaN™ lineup of GaN devices that contributes to greater energy application savings and miniaturization. While developing ROHM products, we will also promote joint development through strategic partnerships to contribute to solving social issues by making applications more efficient and compact.
* EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.