SiC MOSFETs

SiC MOSFETs

SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.

ROHM’s 4th Generation SiC MOSFET

Our latest 4th Gen SiC MOSFETs provide industry-leading low ON resistance with improving short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.

This application note describes the features of the 4th Gen SiC MOSFET discrete package products and explains in more detail how to obtain their maximum performance.

Discrete Package Lineup

The TO-263-7L (7pin SMD) and TO-247-4L (4pin THD) are available with a driver source pin that maximizes SiC switching performance. At the same time, surface mount package types are available that support automated mounting for improved productivity.

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      Supporting Information

       

      ROHM 4th Gen SiC MOSFETs

      Our latest 4th gen SiC MOSFETs provides industry-leading low ON resistance with improving short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.

      Key Features

      1.Achieves industry-leading low ON resistance with improving short-circuit ruggedness

      Nevertheless, with 4th Gen SiC MOSFETs, ROHM has successfully reduced ON resistance by 40% compared to conventional products with improving short-circuit ruggedness, through device structure improvements based on its original double-trench design. The result: is a robust power switching device with the lowest ON resistance in the industry. (ROHM Feb 2022 study)

      2.Minimizes switching loss by drastically reducing parasitic capacitance

      ROHM’s 4th Gen MOSFETs achieve 50% lower switching loss over conventional products by significantly reducing the gate-drain capacitance (Cgd).

      3.Supports 15V Gate-Source voltage, improving application design freedom

      In contrast to the 18V Gate-Source voltage (Vgs) required in the 3rd Generation and earlier SiC MOSFETs, these 4th Gen products support a more flexible gate voltage range (15-18V), enabling to design a gate drive circuit that can also be used for IGBTs.

      Switching loss comparison
      On-resistance comparison

      Application Example: Traction Inverter

      6% electricity consumption reduction can be achieved over IGBT solutions by significantly improving the efficiency mainly in the high torque and low rotational speed range when the 4th Gen. SiC MOSFET is used in the traction inverters (calculated using the WLTC fuel economy test, an international standard).

      Application Example: Traction Inverter

       

      Supporting Content for ROHM 4th Gen SiC MOSFETs

      Evaluation board

      Evaluation board
      4th Generation SiC MOSFET Half Bridge Evaluation Board
      P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001

      The P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001 series of evaluation boards were developed for TO-247N/TO-247-4L package 4th gen SiC MOSFETs. Onboard gate driver and peripheral circuits reduce the number of man-hours required for design and evaluation.

      Evaluation board
      Evaluation Board HB2637L-EVK-301

      The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

      Evaluation board
      EVK Simulatrion (ROHM Solution Simulator)
      ・P05CT4018KR-EVK-001 Double Pulse Test
      ・P04SCT4018KE-EVK-001 Double Pulse Test
      ・HB2637L-EVK-301 Double Pulse Test

      We have released the double-pulse test simulation environment with the evk simulation model.
      The simulation circuit includes EVK's pattern parasitic inductor and can simulate the operating waveforms of 4G-SiC MOSFETs with high accuracy. Simulation conditions such as operating voltage, gate drive circuit, and snubber circuit constants can also be changed. It can be used to reduce man-hours during evaluation of actual devices and for verification before board prototyping.

      Documents

      White Paper

      Application Note

      Design model

      Simulations (Login Required)

      TO-247N (3pin)

      TO-247-4L (4pin)

       

      SiC MOSFET Support Content

      Evaluation Board

      CategorySiC ProductImagePart No.User GuidePurchase
      Board
      SiC-MOS Evaluation
      Board
      SCT4XXX series Trench(4th Generation) TO-247-NNEW
      P04SCT4018KE-EVK-001
      User Guide
      Product Specification
      Contact Us
      SCT4XXX series Trench(4th Generation) TO-247-4LNEW
      P05SCT4018KR-EVK-001
      Contact Us
      SCT3XXX series Trench(3rd Generation) TO-247-4LP02SCT3040KR-EVK-001 User Guide
      Product Specification
      Online
      Distributors

      Documents

      White Paper

      Application Note

      Technical Articles

      Schematic Design & Verification

      Thermal Design

      Models & Tools

      Simulations (Login Required)

      ROHM Solution Simulator is a new web-based electronic circuit simulation tool that can carry out a variety of simulations, from initial development that involves component selection and individual device verification to the system-level verification stage. This makes it possible to quickly and easily implement complete circuit verification of ROHM power devices and ICs, in simulation circuits under close to actual conditions, significantly reducing application development efforts.

      TO-247N (3pin)

      TO-247-4L (4pin)

      Application

      Topology

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