SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.

ROHM recently introduced its SCT Series of 3rd-generation trench-gate type SiC MOSFETs. Available in 6 variants(650V/1200V), these MOSFETs feature approx. 50% lower ON-resistance than 2nd-generation planar types, making them ideal for large server power supplies, UPS systems, solar power converters, and electric vehicle charging stations requiring high efficiency.

The SCT3 series is offered in a 4-pin package (TO-247-4L) that maximizes switching performance. This reduces switching loss by up to 35% over conventional 3-pin package types, contributing to lower power consumption in a variety of applications.

In addition, unlike conventional 3-pin package SiC MOSFETs in which the gate voltage drops due to the inductance component of the source terminal, causing the switching speed to be delayed, this new 4-pin package incorporates a source terminal for the gate driver separate from the conventional source terminal that minimizes this reduction in gate voltage, making it possible to maximize switching performance.

In manufacturing, the ROHM SCT2080KE MOSFET improves the efficiency of pulse generators by delivering a steep rise time that increases productivity.