SiC MOSFETs eliminate tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON-resistance increases and provides greater package miniaturization and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.
The SiC MOSFET attributes are especially valuable in medical imaging equipment. Its nearly instantaneous switching abilities enable manufacturers to build high-voltage switches for X-ray machines that allow technicians to better control radiation exposure during tests yet still produce quality results.
In manufacturing, the ROHM SCT2080KE MOSFET improves the efficiency of pulse generators by delivering a steep rise time that increases productivity.