1200V, 36mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
SCT4036KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
* This is a standard-grade product.
For Automotive usage, please contact Sales.