SCT4036KW7 (New)
1200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT4036KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet Buy Sample
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy Sample

Product Detail

 
Part Number | SCT4036KW7TL
Status | Recommended
Package | TO-263-7L
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

36

Generation

4th Gen (Trench)

Drain Current[A]

40

Total Power Dissipation[W]

150

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

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Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Evaluation
Board

 
    • Evaluation Board
    • HB2637L-EVK-301
    • The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

  • User's Guide