SCT4062KW7
1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4062KW7
SCT4062KW7
1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4062KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | SCT4062KW7TL
Status |
Recommended
Package |
TO-263-7L
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS |
Yes
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
62
Generation
4th Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
93
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.2x15.4 (t=4.7)
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
