SCT4062KW7HR
1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT4062KW7HR
SCT4062KW7HR
1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
AEC-Q101 qualified automotive grade product. SCT4062KW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Product Detail
Part Number | SCT4062KW7HRTL
Status |
Recommended
Package |
TO-263-7L
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS |
Yes
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
62
Generation
4th Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
93
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.2x15.4 (t=4.7)
Common Standard
AEC-Q101 (Automotive Grade)
Features:
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
