SCT4045DR
750V, 45mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

SCT4045DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

 
Part Number | SCT4045DRC15
Status | Recommended
Package | TO-247-4L
Packing Type | Taping
Unit Quantity | 450
Minimum Package Quantity | 30
RoHS | Yes
Product Longevity Program | 10 Years

Specifications:

Drain-source Voltage[V]

750

Drain-source On-state Resistance(Typ.)[mΩ]

45

Generation

4th Gen (Trench)

Drain Current[A]

34

Total Power Dissipation[W]

115

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

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Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Similar Products

 

Different Grade

SCT4045DRHR   Grade| Automotive StatusRecommended

Reference Design / Application Evaluation Kit

 
    • Evaluation Board - P05SCT4018KR-EVK-001
      • This board is designed with the optimum gate drive circuit for "SCT4018KR", surely TO-247-4L can also be evaluated
      • Single power supply(+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Supports various power supply topologies(Buck, Boost, Half-Bridge)
      • Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
      • Active mirror clamp circuit(driver IC built-in type)
      • Gate surge clamp circuit

  • User's Guide
    • Application EVK - APEVK66001
    • Industrial 3.6kW Totem Pole PFC Application EVK
    • Various applications are equipped with AC/DC functions, and the Totem Pole PFC topology is the standard circuit.The TPPFCSIC-EVK-301 implements a single-phase AC/DC conversion stage in Totem Pole PFC topology. Key components are ROHM Gen.4 SiC MOSFETs (SCT4045DR) as the main high-frequency switching elements, as well as the BM61S41 single-channel isolated gate driver IC. In addition, SJ MOSFETs and auxiliary power supply, among other components from ROHM, were utilized to create a high-performance AC/DC circuit for single-phase operation.TPPFCSIC-EVK-301 reaches up to 98.5% efficiency at 230Vac.If this Totem Pole PFC reference design is coupled with a secondary stage of comparable efficiency, it becomes possible to achieve the 80+ Titanium target efficiency of power supply products. Moreover, this contributes to enhancing the Annual Performance Factor (APF) of air conditioners.

      This reference design consists of two boards. Each is shown below.

      • TPPFCSIC-EVK-201_PCB3051:Totem Pole PFC Board
      • TPPFCSIC-EVK-201_PCB3052 : AUX Power Supply Board

      The software for this reference design can be downloaded from below.
      [TPPFCSIC-EVK-301_SW.zip Download]

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