SCT4045DRHR (New)
750V, 34A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT4045DRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet Buy Sample
Data Sheet Buy Sample

Product Detail

 
Part Number | SCT4045DRHRC15
Status | Recommended
Package | TO-247-4L
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

750

Drain-source On-state Resistance(Typ.)[mΩ]

45

Generation

4th Gen (Trench)

Drain Current[A]

34

Total Power Dissipation[W]

115

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

Common Standard

AEC-Q101 (Automotive Grade)

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Features:

  • Qualified to AEC-Q101
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant