1700V, 3.7A, THD, Silicon-carbide (SiC) MOSFET

1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET.

ROHM Featured Products

SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board
BD7682FJ-LB-EVK-402 [Input: AC 400-690V , Output: 24V DC]
Application Note , Presentation Document , Buy Evaluation Board
BD7682FJ-EVK-301 [Input: AC 210-480V DC 300-900V , Output: 12V DC]
Application Note, Evaluation Board User Guide, Quick Start Guide, Inquiry Evaluation Board

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

Part Number | SCT2H12NZGC11
Status | Recommended
Package | TO-3PFM
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes


Drain-source Voltage[V]


Drain-source On-state Resistance(Typ.)[mΩ]



2nd Gen (Planar)

Drain Current[A]


Total Power Dissipation[W]


Junction Temperature(Max.)[°C]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]


Package Size [mm]

16x21 (t=5.2)

Find Similar


  • Low on-resistance
  • Fast switching speed
  • Long creepage distance
  • Simple to drive
  • Pb-free lead plating; RoHS compliant

Supporting Information




SiC is attracting much attention as a next-generation compound semiconductor due to its superior characteristics over silicon.。
Auxiliary power supplies used in high voltage, high power industrial equipment typically utilize high voltage (>1000V) silicon MOSFETs. But by replacing these with high efficiency SiC MOSFETs heat generation can be significantly reduced, eliminating the need for external parts such as heat sinks.
ROHM has recently expanded its considerable lineup by offering 1700V class SiC MOSFETs along with an evaluation board that facilitates performance verification and application development.

Evaluation Board

As a comprehensive semiconductor manufacturer, ROHM now offers ICs optimized for use with SiC devices, including the BD7682FJ-LB DC/DC converter control IC designed to maximize the performance of SiC power MOSFETs such as the SCT2H12NZ. An evaluation board (BD7682FJ-LB-EVK-402) integrating both products is also available.

Evaluation Power Supply Board(BD7682FJ-LB-EVK-402)

Key Features 1:Optimized for auxiliary power supplies in industrial equipment

Compared to 1500V silicon MOSFETs used in auxiliary industrial-grade power supplies, ROHM's SiC
power MOSFETs feature 8x lower ON resistance (1.15Ω) and a withstand voltage of 1700V. In addition, the TO-3PFM package delivers the necessary creepage distance (distance measured along the surface of the insulator) demanded by industrial equipment.

ON Resistance Comparison Application Example

Key Features 2:Achieve even higher efficiency by combining with ROHM's dedicated IC

AC/DC Inverter Efficiency Comparison: Si vs. SiC

Combining with ROHM's BD7682FJ-LB AC/DC converter control IC improves efficiency by up to 6% while minimizing heat generation, making it possible to simplify and reduce the size of heat dissipation components.


Part No.PackagePolarityVDSSIDPD
NEW SCT2H12NZTO-3PFMNch1700V3.7A35W1.15Ω
NEW SCT2750NY5.9A57W0.75Ω

Reference Design / Application Evaluation Kit

    • Evaluation Board - BD7682FJ-LB-EVK-302
    • The BD7682FJ is an AC/DC quasi-resonant flyback controller IC from ROHM Semiconductor and offers an Auxiliary Power Supply Solution if combined with the 1700 V SiC MOSFET (SCT2H12NZ). The BD7682FJ and SCT2H12NZ combined together have been used to develop an isolated 100 W 24 V output auxiliary power solution with a very accurate voltage regulation.

  • Quick Start Guide User Guide

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