SCT2H12NZ
1700V, 3.7A, THD, Silicon-carbide (SiC) MOSFET

1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET.

ROHM Featured Products

SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board
BD7682FJ-LB-EVK-402 [Input: AC 400-690V , Output: 24V DC]
Application Note , Presentation Document , Buy Evaluation Board
BD7682FJ-EVK-301 [Input: AC 210-480V DC 300-900V , Output: 12V DC]
Application Note, Evaluation Board User Guide, Quick Start Guide, Inquiry Evaluation Board

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy * Sample *

Product Detail

 
Part Number | SCT2H12NZGC11
Status | Recommended
Package | TO-3PFM
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

1150

Generation

2nd Gen (Planar)

Drain Current[A]

3.7

Total Power Dissipation[W]

35

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

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Features:

  • Low on-resistance
  • Fast switching speed
  • Long creepage distance
  • Simple to drive
  • Pb-free lead plating; RoHS compliant

Supporting Information

 

Overview

package

SiC is attracting much attention as a next-generation compound semiconductor due to its superior characteristics over silicon.。
Auxiliary power supplies used in high voltage, high power industrial equipment typically utilize high voltage (>1000V) silicon MOSFETs. But by replacing these with high efficiency SiC MOSFETs heat generation can be significantly reduced, eliminating the need for external parts such as heat sinks.
ROHM has recently expanded its considerable lineup by offering 1700V class SiC MOSFETs along with an evaluation board that facilitates performance verification and application development.

Evaluation Board

As a comprehensive semiconductor manufacturer, ROHM now offers ICs optimized for use with SiC devices, including the BD7682FJ-LB DC/DC converter control IC designed to maximize the performance of SiC power MOSFETs such as the SCT2H12NZ. An evaluation board (BD7682FJ-LB-EVK-402) integrating both products is also available.

Evaluation Power Supply Board（BD7682FJ-LB-EVK-402）

Key Features 1：Optimized for auxiliary power supplies in industrial equipment

Compared to 1500V silicon MOSFETs used in auxiliary industrial-grade power supplies, ROHM's SiC
power MOSFETs feature 8x lower ON resistance (1.15Ω) and a withstand voltage of 1700V. In addition, the TO-3PFM package delivers the necessary creepage distance (distance measured along the surface of the insulator) demanded by industrial equipment.

ON Resistance Comparison Application Example

Key Features 2：Achieve even higher efficiency by combining with ROHM's dedicated IC

AC/DC Inverter Efficiency Comparison: Si vs. SiC

Combining with ROHM's BD7682FJ-LB AC/DC converter control IC improves efficiency by up to 6% while minimizing heat generation, making it possible to simplify and reduce the size of heat dissipation components.

Lineup

Part No.PackagePolarityVDSSIDPD
(Tc=25℃)		RDS(ON)
VGS=18V		Qg
VGS=18V
NEW SCT2H12NZTO-3PFMNch1700V3.7A35W1.15Ω
(Typ.)		14nC
(Typ.)
NEW SCT2H12NYTO-268-2L4A44W
NEW SCT2750NY5.9A57W0.75Ω
(Typ.)		17nC
(Typ.)

Related Information

Support Page

News

New Product Bulletin

Evaluation
Board

 
    • Evaluation Board
    • BD7682FJ-LB-EVK-302

    • BD7682FJ is an AC/DC quasi-resonant flyback controller IC from ROHM Semiconductor and offers an Auxiliary Power Supply Solution if combined with the 1700 V SiC MOSFET (SCT2H12NZ). The BD7682FJ and SCT2H12NZ combined together have been used to develop an isolated 100 W 24 V output auxiliary power solution with a very accurate voltage regulation.

  • User's Guide Buy
    • Evaluation Board
    • BD7682FJ-LB-EVK-402

    • BD7682FJ-LB-EVK-402 evaluation board outputs 24 V voltage from the input of 300 Vdc to 900 Vdc. The output current supplies up to 1 A. The BD768xFJ-LB series are Quasi-Resonant switching AC/DC converter for driving SiC (Silicon Carbide) MOSFET. Using external switching MOSFET and current detection resistors provides a lot of flexibility in the design.

  • User's Guide Buy
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