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SiC MOSFET - SCT2H12NZ

1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | SCT2H12NZGC11
Status | Active
Package | TO-3PFM
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

1150

Drain Current[A]

3.7

Total Power Dissipation[W]

35

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Long creepage distance
  • Simple to drive
  • Pb-free lead plating; RoHS compliant