1700V, 3.7A, THD, Silicon-carbide (SiC) MOSFET

1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET.

ROHM Featured Products

SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board
BD7682FJ-LB-EVK-402 [Input: AC 400-690V , Output: 24V DC]
Application Note , Presentation Document , Buy Evaluation Board
BD7682FJ-EVK-301 [Input: AC 210-480V DC 300-900V , Output: 12V DC]
Application Note, Evaluation Board User Guide, Quick Start Guide, Inquiry Evaluation Board

Data Sheet Buy Sample
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy Sample

Product Detail

Part Number | SCT2H12NZGC11
Status | Recommended
Package | TO-3PFM
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes


Drain-source Voltage[V]


Drain-source On-state Resistance(Typ.)[mΩ]


Drain Current[A]


Total Power Dissipation[W]


Junction Temperature(Max.)[°C]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]


Package Size [mm]

16x21 (t=5.2)


  • Low on-resistance
  • Fast switching speed
  • Long creepage distance
  • Simple to drive
  • Pb-free lead plating; RoHS compliant

Supporting Information




SiC is attracting much attention as a next-generation compound semiconductor due to its superior characteristics over silicon.。
Auxiliary power supplies used in high voltage, high power industrial equipment typically utilize high voltage (>1000V) silicon MOSFETs. But by replacing these with high efficiency SiC MOSFETs heat generation can be significantly reduced, eliminating the need for external parts such as heat sinks.
ROHM has recently expanded its considerable lineup by offering 1700V class SiC MOSFETs along with an evaluation board that facilitates performance verification and application development.

Evaluation Board

As a comprehensive semiconductor manufacturer, ROHM now offers ICs optimized for use with SiC devices, including the BD7682FJ-LB DC/DC converter control IC designed to maximize the performance of SiC power MOSFETs such as the SCT2H12NZ. An evaluation board (BD7682FJ-LB-EVK-402) integrating both products is also available.

Evaluation Power Supply Board(BD7682FJ-LB-EVK-402)

Key Features 1:Optimized for auxiliary power supplies in industrial equipment

Compared to 1500V silicon MOSFETs used in auxiliary industrial-grade power supplies, ROHM's SiC
power MOSFETs feature 8x lower ON resistance (1.15Ω) and a withstand voltage of 1700V. In addition, the TO-3PFM package delivers the necessary creepage distance (distance measured along the surface of the insulator) demanded by industrial equipment.

ON Resistance Comparison Application Example

Key Features 2:Achieve even higher efficiency by combining with ROHM's dedicated IC

AC/DC Inverter Efficiency Comparison: Si vs. SiC

Combining with ROHM's BD7682FJ-LB AC/DC converter control IC improves efficiency by up to 6% while minimizing heat generation, making it possible to simplify and reduce the size of heat dissipation components.


Part No. Package Polarity VDSS ID PD
NEW SCT2H12NZ TO-3PFM Nch 1700V 3.7A 35W 1.15Ω
NEW SCT2H12NY TO-268-2L 4A 44W
NEW SCT2750NY 5.9A 57W 0.75Ω


    • Evaluation Board
    • BD7682FJ-LB-EVK-302
    • BD7682FJ is an AC/DC quasi-resonant flyback controller IC from ROHM Semiconductor and offers an Auxiliary Power Supply Solution if combined with the 1700 V SiC MOSFET (SCT2H12NZ). The BD7682FJ and SCT2H12NZ combined together have been used to develop an isolated 100 W 24 V output auxiliary power solution with a very accurate voltage regulation.

  • User's Guide Buy
    • Evaluation Board
    • BD7682FJ-LB-EVK-402
    • BD7682FJ-LB-EVK-402 evaluation board outputs 24 V voltage from the input of 300 Vdc to 900 Vdc. The output current supplies up to 1 A. The BD768xFJ-LB series are Quasi-Resonant switching AC/DC converter for driving SiC (Silicon Carbide) MOSFET. Using external switching MOSFET and current detection resistors provides a lot of flexibility in the design.

  • User's Guide Buy

Design Resources



White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Quick Start Guide

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

User's Guide

  • BD7682FJ-EVK-402 Evaluation Board User's Guide
  • 100 W Auxiliary Power Supply Eval Board BD7682FJ-LB-EVK-302

Application Note

  • BD7682FL-LB Application Note

Technical Articles

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Snubber circuit design methods for SiC MOSFET
  • Gate-Source Voltage Surge Suppression Methods
  • Gate-source voltage behaviour in a bridge configuration
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • What Is Thermal Design
  • Basics of Thermal Resistance and Heat Dissipation
  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Thermocouples
  • What is a Thermal Model? (SiC Power Device)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple


Simulations (Login Required)

ROHM Solution Simulator is a new web-based electronic circuit simulation tool that can carry out a variety of simulations, from initial development that involves component selection and individual device verification to the system-level verification stage. This makes it possible to quickly and easily implement complete circuit verification of ROHM power devices and ICs, in simulation circuits under close to actual conditions, significantly reducing application development efforts.
  • AC-DC PFC A001: BCM VIN=200V IIN=2.5A
  • AC-DC PFC A002: BCM Diode-Bridge-Less VIN=200V IIN=2.5A
  • AC-DC PFC A004: CCM VIN=200V IIN=2.5A
  • AC-DC PFC A005: CCM 2-Phase VIN=200V IIN=5A
  • AC-DC PFC A006: CCM Synchro VIN=200V IIN=2.5A
  • AC-DC PFC A011: DCM VIN=200V IIN=2.5A
  • AC-DC PFC A012: DCM 2-Phase VIN=200V IIN=5A
  • AC-DC PFC A014: DCM Synchro VIN=200V IIN=2.5A
  • DC-DC Converter C006: Buck Converter Vo=250V Io=20A
  • DC-DC Converter C007: Buck Converter 2-Phase Vo=250V Io=40A
  • DC-DC Converter C010: Flyback Converter VIN=800V Vo=25V Io=10A
  • DC-DC Converter C011: Forward Converter VIN=500V Vo=25V Io=10A
  • DC-DC Converter C012: LLC Buck Converter Vo=12V Io=250A
  • DC-DC Converter C013: Phase-Shift Buck Converter Vo=12V Io=250A
  • DC-DC Converter C014: Quasi-Resonant Converter VIN=800V Vo=25 Io=10A


  • SCT2H12NZ SPICE Simulation Evaluation Circuit
  • SCT2H12NZ SPICE Model
  • SCT2H12NZ Thermal Model (lib)
  • How to Create Symbols for PSpice Models

Characteristics Data

  • ESD Data

Packaging & Quality

Package Information

  • Package Dimensions
  • Inner Structure
  • Taping Information
  • Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation
  • Condition of Soldering

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)