1700V, 3.7A, THD, Silicon-carbide (SiC) MOSFET - SCT2H12NZ
1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET.
ROHM Featured Products
SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board
BD7682FJ-LB-EVK-402 [Input: AC 400-690V , Output: 24V DC]
Apprication Note , Presentation Document , Buy Evaluation Board
BD7682FJ-EVK-301 [Input: AC 210-480V DC 300-900V , Output: 12V DC]
Application Note, Evaluation Board User Guide, Quick Start Guide, Inquiry Evaluation Board
×
Specifications:
Drain-source Voltage[V]
1700
Drain-source On-state Resistance(Typ.)[mΩ]
1150.0
Drain Current[A]
3.7
Total Power Dissipation[W]
35
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- Low on-resistance
- Fast switching speed
- Long creepage distance
- Simple to drive
- Pb-free lead plating; RoHS compliant