N-channel Silicon Carbide Power MOSFET - SCT2H12NY | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
N-channel Silicon Carbide Power MOSFET - SCT2H12NY
1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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Specifications:
Drain-source Voltage[V]
1700
Drain-source On-state Resistance(Typ.)[mΩ]
1150.0
Drain Current[A]
4.0
Total Power Dissipation[W]
44
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- Low on-resistance
- Fast switching speed
- Long creepage distance with no center lead
- Simple to drive
- Pb-free lead plating; RoHS compliant