Last Time Buy

SCT2H12NY

1700V, 4A, SMD, Silicon-carbide (SiC) MOSFET

Data Sheet

SCT2H12NY

Last Time Buy SCT2H12NY
1700V, 4A, SMD, Silicon-carbide (SiC) MOSFET

Products discontinuation (EOL) has been announced.

Data Sheet

Product Detail

Part Number | SCT2H12NYTB

Status | Last Time Buy

Package | TO-268-2L

Packing Type | Taping

Unit Quantity | 800

Minimum Package Quantity | 800

RoHS | Yes

Specifications:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

1150

Generation

2nd Gen (Planar)

Drain Current[A]

Total Power Dissipation[W]

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

18.9x15.95 (t=5.2)

Features:

Low on-resistance
Fast switching speed
Long creepage distance with no center lead
Simple to drive
Pb-free lead plating; RoHS compliant

Design Resources

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Documents

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Type	Title	Last Updated
Data Sheet	SCT2H12NY Data Sheet	2016/09/29
Application Note	How to Suppress the Parallel Drive Oscillation in SiC Modules	2024/08/27
Application Note	Part Explanation	2024/08/02
Application Note	Types and Features of Transistors	2024/07/05

Title	Description
No data available in table

Technical Articles

Search:

Type	Title	Last Updated
Technical Article	Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)	2025/04/16
Schematic Design & Verification	How to Use LTspice® Models	2025/03/06
White Paper	Power Eco Family: Overview of ROHM's Power Semiconductor Lineup	2025/02/26
Technical Article	Generation Mechanism of Voltage Surge on Commutation Side (Basic)	2025/02/03
Technical Article	How to measure the oscillation occurs between parallel-connected devices	2025/01/15
Technical Article	Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET	2024/10/16
Schematic Design & Verification	Best practices for the connection of Driver Source/Emitter terminals in discrete devices	2024/10/07
Technical Article	Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules	2024/10/01
Thermal Design	Thermal Resistance Measurement Method for SiC MOSFET	2024/09/27
Technical Article	SiC MOSFET Layout Design Considerations	2024/09/05
Schematic Design & Verification	How to Use PSIM Models	2024/08/27
Technical Article	How to Use PLECS Models	2024/08/08
Schematic Design & Verification	Method for Monitoring Switching Waveform	2024/06/04
Schematic Design & Verification	Oscillation countermeasures for MOSFETs in parallel	2023/12/19
Schematic Design & Verification	Basics and Design Guidelines for Gate Drive Circuits	2023/12/08
Schematic Design & Verification	Design Method for Comparator-less Miller Clamp Circuits	2023/08/07
Thermal Design	Judgment Criteria of Thermal Evaluation	2023/03/08
Thermal Design	How to Use the Thermal Resistance and Thermal Characteristics Parameters	2023/02/24
Thermal Design	θ_JA and Ψ_JT	2023/02/13
Thermal Design	θ_JC and Ψ_JT	2023/01/20
Schematic Design & Verification	How to Use LTspice® Models: Tips for Improving Convergence	2023/01/11
Thermal Design	Precautions for Thermal Resistance of Insulation Sheet	2022/10/11
Thermal Design	Measurement Method and Usage of Thermal Resistance RthJC	2022/09/15
Thermal Design	Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials	2022/07/28
Thermal Design	PCB Layout Thermal Design Guide	2022/07/12
Thermal Design	Notes for Calculating Power Consumption:Static Operation	2022/07/06
Schematic Design & Verification	Calculating Power Loss from Measured Waveforms	2022/07/01
Schematic Design & Verification	800V Three-Phase Output LLC DC/DC Resonant Converter	2022/03/30
White Paper	Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs	2022/03/11
White Paper	4 Steps for Successful Thermal Designing of Power Devices	2022/03/07
Schematic Design & Verification	5kW High-Efficiency Fan-less Inverter	2021/11/11
White Paper	The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level	2021/11/05
Thermal Design	Basics of Thermal Resistance and Heat Dissipation	2021/08/18
Thermal Design	What Is Thermal Design	2021/06/24
Thermal Design	Method for Calculating Junction Temperature from Transient Thermal Resistance Data	2021/06/14
White Paper	LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units	2021/02/25
Schematic Design & Verification	Application Note for SiC Power Devices and Modules	2020/12/15
White Paper	Solving the challenges of driving SiC MOSFETs with new packaging developments	2020/12/14
Schematic Design & Verification	Importance of Probe Calibration When Measuring Power: Deskew	2020/12/07
Thermal Design	Precautions When Measuring the Rear of the Package with a Thermocouple	2020/10/26
Schematic Design & Verification	Gate-Source Voltage Surge Suppression Methods	2020/09/17
Schematic Design & Verification	Gate-source voltage behaviour in a bridge configuration	2020/09/17
Schematic Design & Verification	Snubber circuit design methods for SiC MOSFET	2020/09/17
Schematic Design & Verification	Impedance Characteristics of Bypass Capacitor	2020/09/16
Schematic Design & Verification	Calculation of Power Dissipation in Switching Circuit	2020/07/31
Schematic Design & Verification	Precautions during gate-source voltage measurement for SiC MOSFET	2020/04/23
Thermal Design	Notes for Temperature Measurement Using Forward Voltage of PN Junction	2020/04/20
Thermal Design	Notes for Temperature Measurement Using Thermocouples	2020/04/09
Thermal Design	Two-Resistor Model for Thermal Simulation	2020/04/09
Thermal Design	How to Use Thermal Models	2020/02/18
Thermal Design	What is a Thermal Model? (SiC Power Device)	2019/12/27

Type	Title	Last Updated
No data available in table

Tools

Search:

Type	Title	Last Updated
Models	SCT2H12NY LTspice Model	2023/09/13
Models	How to Create Symbols for PSpice Models	2021/06/02
Characteristics Data	ESD Data	2017/04/24
Models	SCT2H12NY SPICE Thermal Model	2017/01/24
Models	SCT2H12NY SPICE Model	2017/01/24
Models	SCT2H12NY SPICE Simulation Evaluation Circuit	2017/01/24

Packaging & Quality

Search:

Type	Title	Last Updated
Environmental Data	Compliance of the RoHS directive	2025/04/08
Environmental Data	Compliance of the ELV directive	2025/04/08
Environmental Data	Certificate of not containing Stockholm Convention Substances (POPs)	2025/04/08
Package Information	Moisture Sensitivity Level	2024/02/06
Export Information	About Export Administration Regulations (EAR)	2024/02/06
Package Information	Condition of Soldering	2022/04/04
Package Information	Package Dimensions	2017/08/17
Manufacturing Data	Reliability Test Result	2017/04/24
Package Information	Taping Information	2017/04/24
Package Information	Anti-Whisker formation	2016/09/27
Environmental Data	Compliance of the ELV directive	2016/09/27
Environmental Data	About Flammability of Materials	2016/09/27

SCT2H12NY

Last Time Buy SCT2H12NY
1700V, 4A, SMD, Silicon-carbide (SiC) MOSFET

Product Detail

Specifications:

Features:

Design Resources

Documents

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Technical Articles

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Packaging & Quality

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