Rohm Breadcrumb

Rohm Productdetail

N-channel Silicon Carbide Power MOSFET - SCT2H12NY

1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | SCT2H12NYTB
Status | Active
Package | TO-268-2L
Unit Quantity | 800
Minimum Package Quantity | 800
Packing Type | Taping
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

1150.0

Drain Current[A]

4.0

Total Power Dissipation[W]

44

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Long creepage distance with no center lead
  • Simple to drive
  • Pb-free lead plating; RoHS compliant