SCT2H12NY
1700V, 4A, SMD, Silicon-carbide (SiC) MOSFET

1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.

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* This is a standard-grade product.
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Product Detail

 
Part Number | SCT2H12NYTB
Status | Active
Package | TO-268-2L
Unit Quantity | 800
Minimum Package Quantity | 800
Packing Type | Taping
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

1150

Generation

2nd Gen (Planar)

Drain Current[A]

4

Total Power Dissipation[W]

44

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

15.95x18.9 (t=5.2)

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Features:

  • Low on-resistance
  • Fast switching speed
  • Long creepage distance with no center lead
  • Simple to drive
  • Pb-free lead plating; RoHS compliant