1700V, 6A, SMD, Silicon-carbide (SiC) MOSFET - SCT2750NY

1700V 6A N-channel SiC (Silicon Carbide) power MOSFET.

* This is a standard-grade product.
For Automotive usage, please contact Sales.
Part Number | SCT2750NYTB
Status | Recommended
Package | TO-268-2L
Unit Quantity | 800
Minimum Package Quantity | 800
Packing Type | Taping
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

750.0

Drain Current[A]

6.0

Total Power Dissipation[W]

57

Junction Temperature(Max.)[℃]

175

Storage Temperature (Min.)[℃]

-55

Storage Temperature (Max.)[℃]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Long creepage distance with no center lead
  • Simple to drive
  • Pb-free lead plating; RoHS compliant