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Not Recommended for New Design N-channel Silicon Carbide Power MOSFET - SCT2750NY

Replacement Product For SCT2750NY
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Part Number | SCT2750NYTB
Status | NRND
Package | TO-268-2L
Unit Quantity | 800
Minimum Package Quantity | 800
Packing Type | Taping
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

750.0

Drain Current[A]

6.0

Total Power Dissipation[W]

57

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Long creepage distance with no center lead
  • Simple to drive
  • Pb-free lead plating; RoHS compliant