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SiC SBDIncorporating Silicon Carbide high-speed device construction into Schottky barrier diodes (SBDs) makes it possible to achieve withstand voltages greater than 600V.
As a result, replacing existing mainstream PN junction diodes (fast recovery types) significantly reduces recovery loss, contributing to lower noise and greater compactness in passive components, such as coils.
SiC MOSFETSilicon Carbide features a lower drift layer resistance than silicon devices, eliminating the need for conductivity modulation and enabling high withstand voltage with low resistance when used in high-speed devices such as MOSFETs.