Fully Utilizing GaN Power Devices

Maximizing the high-speed switching capabilities of GaN HEMTs demands specialized expertise. This includes the use of ultra-high-speed gate drivers and controller ICs designed for high-speed pulse control.
To solve this problem, power stage ICs are available that combine a GaN HEMT and gate driver IC in a single package.
These ICs eliminate the need for complicated drive adjustments, making it easy to replace Si MOSFETs.

Power Stage IC Overview

Integrates a GaN HEMT and gate driver in a single package
Eliminates the need for troublesome drive adjustments while maximizing GaN HEMT performance.

Fewer Related Components

ROHM, a leading semiconductor supplier, offers power stage ICs that incorporate peripheral related components. This reduces the number of external components, minimizing mounting area while lowering costs.