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Fully Utilizing GaN Power Devices

Maximizing the high-speed switching capabilities of GaN HEMTs demands specialized expertise. This includes the use of ultra-high-speed gate drivers and controller ICs designed for high-speed pulse control.
To solve this problem, power stage ICs are available that combine a GaN HEMT and gate driver IC in a single package.
These ICs eliminate the need for complicated drive adjustments, making it easy to replace Si MOSFETs.

Power Stage IC Overview

Power Stage IC Overview

Integrates a GaN HEMT and gate driver in a single package
Eliminates the need for troublesome drive adjustments while maximizing GaN HEMT performance.

Fewer Related Components

ROHM, a leading semiconductor supplier, offers power stage ICs that incorporate peripheral related components. This reduces the number of external components, minimizing mounting area while lowering costs.

Fewer Related Components

GaN Power DevicesDownload datasheet

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