SuperJunction MOSFET

ROHM utilizes super junction technology for its high voltage (600V+) power MOSFETs
The result is high-speed switching and low ON resistance, making it possible to reduce application loss. ROHM offers two types, one featuring low noise specifications and the other delivering high-speed switching, allowing customers to select the ideal solution based on application requirements. In addition, the PrestoMOS™ series achieves greater energy savings in motors and inverters - a drawback of super junction MOSFETs - by incorporating the industry’s fastest diode utilizing ROHM’s patented technology.

3 Advantages of ROHM Super Junction MOSFETs

  • ① Expanded lineup includes 3 series tailored to customer needs
  • ② Each series offered in a range of packages and ON resistances
  • ③ High quality and performance provided, along with a comprehensive support system

ROHM Super Junction MOSFETs

●Wide range of breakdown voltages and ON-resistances

 500mΩ ≤ Ron typ.500mΩ < Ron typ.
 Active New!Active New!
800VR80xxKNx  R80xxKNx  
650VR65xxENx R65xxKNx  R65xxENx R65xxKNx Under
Planning
600VR60xxENx R60xxKNx Under
Development
R60xxENx R60xxKNx R60xxYNx
R60xxJNx Under
Development
R60xxJNx R60xxVNx
  • :Low Noise Specifications
  • :High-Speed Switching Specifications
  • :Built-In High-Speed Diode
  • :Standard 4th Gen Type
  • :4th Gen Type with Built-In High-Speed Diode

●Select from 6 different package types

SeriesPackage
Surface Mount TypeInsertion Type
TO-252
[DPAK]
LPTS
[D2PAK]
TO-220ABTO-220FMTO-3PFTO-247
TO-252[DPAK] LPTS [D2PAK]TO-220ABTO-220FMTO-3PFTO-247
800VR80xxKND3  R80xxKNX R80xxKNZ4
650VR65xxEND3R65xxENJ R65xxENXR65xxENZR65xxENZ4
R65xxKND3R65xxKNJR65xxKNX3R65xxKNXR65xxKNZR65xxKNZ4
600V
Gen.4
New
R60xxYND3  R60xxYNX3 R60xxYNXR60xxYNZ R60xxYNZ4
R60xxVND3  R60xxVNX3R60xxVNX R60xxVNZ4
600V
Gen.3
R60xxEND3R60xxENJ R60xxENXR60xxENZR60xxENZ4
R60xxKND3R60xxKNJ R60xxKNXR60xxKNZR60xxKNZ4
R60xxJND3R60xxJNJ R60xxJNXR60xxJNZR60xxJNZ4
  • :Low Noise Specifications
  • :High-Speed Switching Specifications
  • :Built-In High-Speed Diode
  • :Standard 4th Gen Type
  • :4th Gen Type with Built-In High-Speed Diode

●Widely adopted in a range of applications + Well-received in terms of characteristics, quality, and support

Widely adopted in a range of applications + Well-received in terms of characteristics, quality, and support

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What is PrestoMOS™?

PrestoMOSTM is a product in which the parasitic diode of the super junction MOSFET is sped up using proprietary patented technology.Due to its characteristic internal structure, the parasitic diode in a typical super junction MOSFET exhibits degraded recovery performance compared with a standard MOSFET. As a result, super junction MOSFETs could not be used in circuits that actively utilize the parasitic diode, such as inverters and bridge-type PFCs.
However, ROHM's PrestoMOSTM overcomes the drawback of super junction MOSFETs by speeding up the parasitic diode, contributing to significantly greater energy savings in applications utilizing bridge circuits and inverters for motor drive.

What is PrestoMOS™?

Following the trend in recent years towards greater energy savings, ROHM has been contributing to increased application energy efficiency through outstanding recovery characteristics, prompting a growing number of designers to replace the combination of IGBT+FRD widely used in inverters with PrestoMOS™.

PrestoMOS™

4th Generation PrestoMOS R60xxVNx Series

  
TO-252TO-220FMTO-220ABTO-247
VDS
(V)
Ron typ
(mΩ)
Vgs=15V
trr typ
(ns)
TO-252TO-220FMTO-220ABTO-247
60025065R6013VND3R6013VNX  
18068 NEWR6018VNX  
13080 NEWR6024VNXNEWR6024VNX3 
9592 NEWR6035VNXNEWR6035VNX3 
59112 R6055VNXR6055VNX3NEWR6055VNZ4
42125   NEWR6077VNZ4
22167   R60A4VNZ4

Recommended Applications

  • Motor drive
  • Energy-saving white goods
  • Charging stations
  • Solar power conditioners
  • Various power supply circuits (LLC/Totem Pole PFC/Full-Bridge)
Recommended Applications

Industry-Leading Recovery Characteristics

ROHM’s PrestoMOS™ series utilizes original patented technology to accelerate the parasitic diode, achieving the industry’s fastest reverse recovery time (trr) - a key characteristic. Normally, this characteristic would be lost as a result of generational scaling due to increased miniaturization, but ROHM’s R60xxVNx series of 4th Gen PrestoMOS™ improves on the basic performance such as ON resistance while maintaining the industry's fastest trr through an optimized structure. Faster trr translates to reduced switching loss in motor and inverter circuits. Double pulse testing is widely used as a method to check these losses. (Please refer to the application note for more information on double pulse testing) Double-pulse tests confirmed the turn-ON switching loss of a single pulse, with the results shown in the figure below. ROHM’s R60xxVNx PrestoMOS™ series was proven to have lower losses than competitor and even ROHM’s existing products. The following figure shows the actual efficiency when ROHM’s R60xxVNx series of PrestoMOS™ is used in a synchronous rectification boost circuit. Similar to the loss relationship verified through double pulse testing above, the results of the actual equipment evaluation show that the R60xxVNx series delivers the lowest loss with the highest efficiency.

  • ■Results of Switching Loss via Double-Pulse Testing

    Results of Switching Loss via Double-Pulse Testing
    *All products used for switching comparison are in the 100mΩ ON-resistance class, with switching loss during turn ON checked at a drain current of 15A and varying gate resistance. The horizontal axis shows the turn ON current change value dif/dt corresponding to each gate resistance.
  • ■Efficiency Comparison Results Using a Synchronous Rectification Boost Circuit

    Efficiency Comparison Results Using a Synchronous Rectification Boost Circuit
    *All products used for comparison are 60mΩ class ON resistance products, with measurements performed under the following conditions: 25℃ ambient temperature, 220V input voltage, 400V output voltage, L=500μH, 70kHz frequency, VDS overshoot at Turn OFF.

The performance of the super junction structure, which is capable of achieving high withstand voltage and low ON resistance, can be further improved by reducing its size. Structural miniaturizatioin improves current density, resulting in 35% lower Ron・A and 30% lower Ron・Qgs compared with the conventional product (R60xxKNx). This allows for lower switching losses at the same ON resistance as conventional products, contributing to further application energy savings.

  • Even faster than conventional high-speed switching products

4th Gen Super Junction MOSFET R60xxYNx Series

 Package
TO-252TO-220FMTO-220ABTO-3PFTO-247TOLL
VDS
(V)
Ron typ
(mΩ)
Vgs=15V
TO-252TO-220FMTO-220ABTO-247To-3PFTOLL
600324R6010YND3R6010YNXR6010YNX3   
215R6014YND3NEWR6014YNXR6014YNX3   
154 NEWR6020YNXR6014YNX3 R6020YNZ4R6020YNJ2
137 R6022YNXR6022YNX3 R6022YNZ4R6022YNJ2
112 R6027YNXR6027YNX3 R6027YNZ4R6027YNJ2
80 R6038YNXR6038YNX3 R6038YNZ4R6038YNJ2
68 R6049YNXR6049YNX3 R6049YNZ4R6049YNJ2
50 R6061YNXR6061YNX3 R6061YNZ4 
49     R6063YNJ2
36   R6089YNX3R6086YNZ4 
21    R60A4YNZ4 

Recommended Applications

・TVs
・ Servers
・ UPS
・ Solar Power Conditioners
・ LED Lighting
・ Various Power Supply Circuits [Boost PFC (BCM, CCM) / 3-Phase Vienna PFC]

Recommended Applications

Class-Leading Switching Speed

Class-leading switching speed is achieved through greater miniaturization and structural optimization. This makes it possible to contribute to greater efficiency in hard-switching type circuits such as continuous current mode PFC. What's more, the advantage provided over switching products does not change even when adjusting the gate resistance for thermal and noise designs.

■Switching Loss of a Single Product

  • Switching Loss of a Single Product
  • ・Measurement Circuit

    Measurement Circuit
    *50mΩ products used for comparison at a drain current of 10A, the gate resistance at turn OFF is fixed at 5Ω and the switching loss is checked when the gate resistance at turn ON is changed.

Broader lineup vs conventional

We can now offer a lineup of products with lower ON resistance and higher current than conventional products in each package. What’s more, the addition of TO220AB and TOLL to the lineup allows us to meet a wider range of customer needs.

  • ■Minimum ON Resistance Updated for Each Package

    Minimum ON Resistance Updated for Each Package
  • ■TOLL package added to the lineup

    TOLL package added to the lineup

Low Noise/High-Speed Switching Specifications

ROHM offers 2 types of super junction MOSFETs, a low noise type (R6xxxENx series) and a high-speed switching model (R6xxxKNx series), available in various package types in both 600V and 650V withstand voltages.
The R6xxxENx series places an emphasis on ease-of-use, and achieves superior performance in noise-sensitive applications.
The R6xxxKNx series is focused on high efficiency and delivers excellent performance in applications demanding high-speed switching.
Both the R6xxxENx and R6xxxKNx series are offered in the same ON resistances, making it possible to select the ideal model based on set needs.
An 800V product is also available for high-speed switching specifications, achieving the industry's highest level of performance.

Low Noise Specifications: R60xxENx/R65xxENx Series

The R6xxxENx series are low-noise products that place an emphasis on ease-of-use.
As a reaction to superior ON resistance and switching performance over conventional planar MOSFETs, super junction MOSFETs typically suffer from degraded noise characteristics. However, the R6xxxENx series utilize an optimized internal gate construction that achieves lower noise, resulting in minimal noise-induced loss.
This makes them ideal for applications seeking to reduce noise, such as audio and lighting equipment.
In addition, they provide a level of noise performance equivalent to conventional planar types, making replacement easy.

Low Noise Specifications: R60xxENx/R65xxENx Series
VDS=600VPackage
TO252LPTSTO220FMTO3PFTO247
TO252LPTSTO220FMTO3PFTO247
Ron typ
(mΩ)
2800R6002END3    
900R6004END3R6004ENJR6004ENX  
570R6007END3R6007ENJR6007ENX  
500R6009END3R6009ENJR6009ENX  
340R6011END3R6011ENJR6011ENX  
260 R6015ENJR6015ENXR6015ENZ 
170 R6020ENJR6020ENXR6020ENZR6020ENZ4
150 R6024ENJR6024ENXR6024ENZR6024ENZ4
115  R6030ENXR6030ENZR6030ENZ4
92   R6035ENZR6035ENZ4
66    R6047ENZ4
38    R6076ENZ4

☆:Under Development

VDS=650VPackage
TO252LPTSTO220FMTO3PFTO247
TO252LPTSTO220FMTO3PFTO247
Ron typ
(mΩ)
3000R6502END3    
955R6504END3R6504ENJR6504ENX  
605R6507END3R6507ENJR6507ENX  
530R6509END3R6509ENJR6509ENX  
360R6511END3R6511ENJR6511ENX  
280 R6515ENJR6515ENXR6515ENZ 
185 R6520ENJR6520ENXR6520ENZR6520ENZ4
160 R6524ENJR6524ENXR6524ENZR6524ENZ4
125  R6530ENXR6530ENZR6530ENZ4
98   R6535ENZR6535ENZ4
70    R6547ENZ4
40    R6576ENZ4

☆:Under Development

High-Speed Switching Specifications: R60xxKNx/R65xxKNx/R80xxKNx Series

The R6xxxKNx series are high-speed switching products that place an emphasis on high efficiency. Optimizing the internal MOSFET structure based on the low-noise R6xxxENx series improves the gate charge characteristics (which is affected by switching speed).
This makes it possible to achieve higher efficiency via high-speed switching without sacrificing the ease-of-use provided by the R6xxxENx series, contributing to higher efficiency in PFC and LLC circuits.
An 800V product is also available for high-speed switching specifications, achieving the industry's highest level of performance.

High-Speed Switching Specifications: R60xxKNx/R65xxKNx/R80xxKNx Series
VDS=600VPackage
TO252LPTSTO220FMTO3PFTO247
TO252LPTSTO220FMTO3PFTO247
Ron typ
(mΩ)
1300R6003KND3    
900R6004KND3R6004KNJR6004KNX  
720R6006KND3R6006KNJR6006KNX  
570R6007KND3R6007KNJR6007KNX  
500R6009KND3R6009KNJR6009KNX  
340R6011KND3R6011KNJR6011KNX  
260 R6015KNJR6015KNXR6015KNZ 
170 R6020KNJR6020KNXR6020KNZR6020KNZ4
150 R6024KNJR6024KNXR6024KNZR6024KNZ4
115  R6030KNXR6030KNZR6030KNZ4
92   R6035KNZR6035KNZ4
66    R6047KNZ4
38    R6076KNZ4

☆:Under Development

VDS=650VPackage
TO252LPTSTO220FMTO3PFTO247
TO252LPTSTO220FMTO3PFTO247
Ron typ
(mΩ)
1400R6503KND3    
955R6504KND3R6504KNJR6504KNX  
605R6507KND3R6507KNJR6507KNX  
530R6509KND3R6509KNJR6509KNX  
360R6511KND3R6511KNJR6511KNX  
280 R6515KNJR6515KNXR6515KNZ 
185 R6520KNJR6520KNXR6520KNZR6520KNZ4
160 R6524KNJR6524KNXR6524KNZR6524KNZ4
125  R6530KNXR6530KNZR6530KNZ4
98   R6535KNZR6535KNZ4
70    R6547KNZ4
40    R6576KNZ4

☆:Under Development

VDS=800VPackage
TO252TO220FMTO247
TO252TO220FMTO247
Ron typ
(mΩ)
7200R8001KND3  
3500NEWR8002KND3R8002KNX 
1500NEWR8003KND3R8003KNX 
750NEWR8006KND3NEWR8006KNX 
500 NEWR8009KNX 
370 NEWR8011KNXR8011KNZ4
200 R8019KNXR8019KNZ4
80  R8052KNZ4

☆:Under Development

3rd Generation PrestoMOSTM: R60xxJNx Series

Feature ① Industry-leading recovery characteristics

ROHM’s PrestoMOSTM series utilizes original patented technology to accelerate the parasitic diode, achieving the industry’s fastest reverse recovery time (trr) - a key characteristic. However, faster diode speeds typically generates steep changes in the current, which tends to increase oscillation.
For our 3rd Generation PrestoMOSTM (R60xxJNx Series), structural optimization makes oscillation difficult during recovery. This facilitates the design and implementation of countermeasures by the customer against oscillation, making them ideal for applications experiencing oscillation during recovery.

Feature ① Industry-leading recovery characteristics

Feature ② Pursuing greater ease-of-use

ROHM’s PrestoMOSTM series is designed for bridge-type circuits and motor inverters requiring high short-circuit breakdown tolerance and self turn-ON prevention. Low short-circuit breakdown tolerance increases the possibility of MOSFET breakdown, while the occurrence of self turn ON can lead to significant power loss.
The R60xxJNx series of 3rd Generation PrestoMOSTM feature an optimized internal structure that makes it possible to clear both of these issues.
Compared to the latest competitor products, class-leading short-circuit breakdown tolerance is achieved, providing a greater level of safety. In addition, self turn ON prevention is ensured, minimizing operating power loss.

Feature ② Pursuing greater ease-of-use