PrestoMOS^TM is a product in which the parasitic diode of the super junction MOSFET is sped up using proprietary patented technology.Due to its characteristic internal structure, the parasitic diode in a typical super junction MOSFET exhibits degraded recovery performance compared with a standard MOSFET. As a result, super junction MOSFETs could not be used in circuits that actively utilize the parasitic diode, such as inverters and bridge-type PFCs.
However, ROHM's PrestoMOS^TM overcomes the drawback of super junction MOSFETs by speeding up the parasitic diode, contributing to significantly greater energy savings in applications utilizing bridge circuits and inverters for motor drive.

Following the trend in recent years towards greater energy savings, ROHM has been contributing to increased application energy efficiency through outstanding recovery characteristics, prompting a growing number of designers to replace the combination of IGBT+FRD widely used in inverters with PrestoMOS™.

ROHM’s PrestoMOS^TM series utilizes original patented technology to accelerate the parasitic diode, achieving the industry’s fastest reverse recovery time (trr) - a key characteristic. However, faster diode speeds typically generates steep changes in the current, which tends to increase oscillation.
For our 3rd Generation PrestoMOS^TM (R60xxJNx Series), structural optimization makes oscillation difficult during recovery. This facilitates the design and implementation of countermeasures by the customer against oscillation, making them ideal for applications experiencing oscillation during recovery.

ROHM’s PrestoMOS^TM series is designed for bridge-type circuits and motor inverters requiring high short-circuit breakdown tolerance and self turn-ON prevention. Low short-circuit breakdown tolerance increases the possibility of MOSFET breakdown, while the occurrence of self turn ON can lead to significant power loss.
The R60xxJNx series of 3rd Generation PrestoMOS^TM feature an optimized internal structure that makes it possible to clear both of these issues.
Compared to the latest competitor products, class-leading short-circuit breakdown tolerance is achieved, providing a greater level of safety. In addition, self turn ON prevention is ensured, minimizing operating power loss.

The R6xxxENx series are low-noise products that place an emphasis on ease-of-use.
As a reaction to superior ON resistance and switching performance over conventional planar MOSFETs, super junction MOSFETs typically suffer from degraded noise characteristics. However, the R6xxxENx series utilize an optimized internal gate construction that achieves lower noise, resulting in minimal noise-induced loss.
This makes them ideal for applications seeking to reduce noise, such as audio and lighting equipment.
In addition, they provide a level of noise performance equivalent to conventional planar types, making replacement easy.

The R6xxxKNx series are high-speed switching products that place an emphasis on high efficiency. Optimizing the internal MOSFET structure based on the low-noise R6xxxENx series improves the gate charge characteristics (which is affected by switching speed).
This makes it possible to achieve higher efficiency via high-speed switching without sacrificing the ease-of-use provided by the R6xxxENx series, contributing to higher efficiency in PFC and LLC circuits.