ROHM utilizes super junction technology for its high voltage (600V+) power MOSFETs.
The result is high-speed switching and low ON resistance, making it possible to reduce application loss. ROHM offers two types, one featuring low noise specifications and the other delivering high-speed switching, allowing customers to select the ideal solution based on application requirements. In addition, the PrestoMOSTM series achieves greater energy savings in motors and inverters - a drawback of super junction MOSFETs - by incorporating the industry’s fastest diode utilizing ROHM’s patented technology.
3 Advantages of ROHM Super Junction MOSFETs
- ① Expanded lineup includes 3 series tailored to customer needs
- ② Each series offered in a range of packages and ON resistances
- ③ High quality and performance provided, along with a comprehensive support system
[New]600V Super Junction MOSFETs "PrestoMOSTM" R60xxJNx Series
ROHM recently announced a new lineup of its PrestoMOSTM series, R60xxJNx series, of 600V super junction MOSFETs that includes 30 new models. This series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).
ROHM Super Junction MOSFETs
● 3 series offered to meet customer demands
● Select from 5 different package types
|Surface Mount Type||Insertion Type|
|Low Noise Specifications||R60xxEND3||R60xxENJ||R60xxENX||R60xxENZ||R60xxENZ4|
|High-Speed Switching Specifications||R60xxKND3||R60xxKNJ||R60xxKNX||R60xxKNZ||R60xxKNZ4|
|Built-In High-Speed Diode
● Widely adopted in a range of applications + Well-received in terms of characteristics, quality, and support
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What is PrestoMOSTM?
PrestoMOSTM is a product in which the parasitic diode of the super junction MOSFET is sped up using proprietary patented technology.Due to its characteristic internal structure, the parasitic diode in a typical super junction MOSFET exhibits degraded recovery performance compared with a standard MOSFET. As a result, super junction MOSFETs could not be used in circuits that actively utilize the parasitic diode, such as inverters and bridge-type PFCs.
However, ROHM's PrestoMOSTM overcomes the drawback of super junction MOSFETs by speeding up the parasitic diode, contributing to significantly greater energy savings in applications utilizing bridge circuits and inverters for motor drive.
Following the trend in recent years towards greater energy savings, ROHM has been contributing to increased application energy efficiency through outstanding recovery characteristics, prompting a growing number of designers to replace the combination of IGBT+FRD widely used in inverters with PrestoMOS™.
- Double-pulse test substantiated advantages of PrestoMOSTM 1.53MB DOWNLOAD
- Benefits given by R60xxJNx series for the Phase-Shift Full-Bridge 2.03MB DOWNLOAD
3rd Generation PrestoMOSTM: R60xxJNx Series
Feature ① Industry-leading recovery characteristics
ROHM’s PrestoMOSTM series utilizes original patented technology to accelerate the parasitic diode, achieving the industry’s fastest reverse recovery time (trr) - a key characteristic. However, faster diode speeds typically generates steep changes in the current, which tends to increase oscillation.
For our 3rd Generation PrestoMOSTM (R60xxJNx Series), structural optimization makes oscillation difficult during recovery. This facilitates the design and implementation of countermeasures by the customer against oscillation, making them ideal for applications experiencing oscillation during recovery.
Feature ② Pursuing greater ease-of-use
ROHM’s PrestoMOSTM series is designed for bridge-type circuits and motor inverters requiring high short-circuit breakdown tolerance and self turn-ON prevention. Low short-circuit breakdown tolerance increases the possibility of MOSFET breakdown, while the occurrence of self turn ON can lead to significant power loss.
The R60xxJNx series of 3rd Generation PrestoMOSTM feature an optimized internal structure that makes it possible to clear both of these issues.
Compared to the latest competitor products, class-leading short-circuit breakdown tolerance is achieved, providing a greater level of safety. In addition, self turn ON prevention is ensured, minimizing operating power loss.
ROHM Super Junction MOSFETs (2 Types)
ROHM offers 2 types of super junction MOSFETs, a low noise type (R6xxxENx series) and a high-speed switching model (R6xxxKNx series), available in various package types in both 600V and 650V withstand voltages.
The R6xxxENx series places an emphasis on ease-of-use, and achieves superior performance in noise-sensitive applications.
The R6xxxKNx series is focused on high efficiency and delivers excellent performance in applications demanding high-speed switching.
Both the R6xxxENx and R6xxxKNx series are offered in the same ON resistances, making it possible to select the ideal model based on set needs.
Low Noise Specifications: R60xxENx/R65xxENx Series
The R6xxxENx series are low-noise products that place an emphasis on ease-of-use.
As a reaction to superior ON resistance and switching performance over conventional planar MOSFETs, super junction MOSFETs typically suffer from degraded noise characteristics. However, the R6xxxENx series utilize an optimized internal gate construction that achieves lower noise, resulting in minimal noise-induced loss.
This makes them ideal for applications seeking to reduce noise, such as audio and lighting equipment.
In addition, they provide a level of noise performance equivalent to conventional planar types, making replacement easy.
High-Speed Switching Specifications: R60xxKNx/R65xxKNx Series
The R6xxxKNx series are high-speed switching products that place an emphasis on high efficiency. Optimizing the internal MOSFET structure based on the low-noise R6xxxENx series improves the gate charge characteristics (which is affected by switching speed).
This makes it possible to achieve higher efficiency via high-speed switching without sacrificing the ease-of-use provided by the R6xxxENx series, contributing to higher efficiency in PFC and LLC circuits.