What is PrestoMOS™?

PrestoMOS™ is a product in which the parasitic diode of the super junction MOSFET is sped up using proprietary patented technology.Due to its characteristic internal structure, the parasitic diode in a typical super junction MOSFET exhibits degraded recovery performance compared with a standard MOSFET. As a result, super junction MOSFETs could not be used in circuits that actively utilize the parasitic diode, such as inverters and bridge-type PFCs.
However, ROHM's PrestoMOS™ overcomes the drawback of super junction MOSFETs by speeding up the parasitic diode, contributing to significantly greater energy savings in applications utilizing bridge circuits and inverters for motor drive.

Following the trend in recent years towards greater energy savings, ROHM has been contributing to increased application energy efficiency through outstanding recovery characteristics, prompting a growing number of designers to replace the combination of IGBT+FRD widely used in inverters with PrestoMOS™.

4th Generation PrestoMOS R60xxVNx Series

			Package
			TO-252	TO-220FM	TO-220AB	TO-3PF	TO-247
VDS (V)	Ron typ (mΩ) Vgs=15V	trr typ (ns)
600	250	65	R6013VND3	R6013VNX
	170	68		R6018VNX
	127	80		R6024VNX	R6024VNX3
	95	92		R6035VNX	R6035VNX3
	59	112		R6055VNX	☆R6055VNX3	R6055VNZ	R6055VNZ4
	42	125				R6077VNZ	R6077VNZ4
	22	167					☆R60A4VNZ4

Recommended Applications

• Motor drive
• Energy-saving white goods
• Charging stations
• Solar power conditioners
• Various power supply circuits (LLC/Totem Pole PFC/Full-Bridge)

Industry-Leading Recovery Characteristics

ROHM’s PrestoMOS™ series utilizes original patented technology to accelerate the parasitic diode, achieving the industry’s fastest reverse recovery time (trr) - a key characteristic. Normally, this characteristic would be lost as a result of generational scaling due to increased miniaturization, but ROHM’s R60xxVNx series of 4th Gen PrestoMOS™ improves on the basic performance such as ON resistance while maintaining the industry's fastest trr through an optimized structure. Faster trr translates to reduced switching loss in motor and inverter circuits. Double pulse testing is widely used as a method to check these losses. (Please refer to the application note for more information on double pulse testing) Double-pulse tests confirmed the turn-ON switching loss of a single pulse, with the results shown in the figure below. ROHM’s R60xxVNx PrestoMOS™ series was proven to have lower losses than competitor and even ROHM’s existing products. The following figure shows the actual efficiency when ROHM’s R60xxVNx series of PrestoMOS™ is used in a synchronous rectification boost circuit. Similar to the loss relationship verified through double pulse testing above, the results of the actual equipment evaluation show that the R60xxVNx series delivers the lowest loss with the highest efficiency.

• ■Results of Switching Loss via Double-Pulse Testing

  

• ■Efficiency Comparison Results Using a Synchronous Rectification Boost Circuit

  

The performance of the super junction structure, which is capable of achieving high withstand voltage and low ON resistance, can be further improved by reducing its size. Structural miniaturizatioin improves current density, resulting in 35% lower Ron・A and 30% lower Ron・Qgs compared with the conventional product (R60xxKNx). This allows for lower switching losses at the same ON resistance as conventional products, contributing to further application energy savings.

4th Gen Super Junction MOSFET R60xxYNx Series

		Package
		TO-252	TO-220FM	TO-220AB	TO-3PF	TO-247	TOLL
VDS (V)	Ron typ (mΩ) Vgs=15V
600	324	☆R6010YND3	☆R6010YNX	NEWR6010YNX3
	215	NEWR6014YND3	NEWR6014YNX	NEWR6014YNX3
	154		NEWR6020YNX	NEWR6020YNX3		NEWR6020YNZ4	☆R6020YNJ2
	137		NEWR6022YNX	NEWR6022YNX3		NEWR6022YNZ4	☆R6022YNJ2
	112		NEWR6027YNX	NEWR6027YNX3		NEWR6027YNZ4	☆R6027YNJ2
	80		☆R6038YNX	NEWR6038YNX3		NEWR6038YNZ4	☆R6038YNJ2
	68		NEWR6049YNX	NEWR6049YNX3		NEWR6049YNZ4	☆R6049YNJ2
	57						☆R6055YNJ2
	50		NEWR6061YNX	☆R6061YNX3		NEWR6061YNZ4
	36				NEWR6086YNZ	NEWR6086YNZ4
	21					☆R60A4YNZ4

Recommended Applications

・TVs
・ Servers
・ UPS
・ Solar Power Conditioners
・ LED Lighting
・ Various Power Supply Circuits [Boost PFC (BCM, CCM) / 3-Phase Vienna PFC]

Class-Leading Switching Speed

Class-leading switching speed is achieved through greater miniaturization and structural optimization. This makes it possible to contribute to greater efficiency in hard-switching type circuits such as continuous current mode PFC. What's more, the advantage provided over switching products does not change even when adjusting the gate resistance for thermal and noise designs.

■Switching Loss of a Single Product

• 

• ・Measurement Circuit

  

Broader lineup vs conventional

We can now offer a lineup of products with lower ON resistance and higher current than conventional products in each package. What’s more, the addition of TO220AB and TOLL to the lineup allows us to meet a wider range of customer needs.

• ■Minimum ON Resistance Updated for Each Package

  

• ■TOLL package added to the lineup

  

Low Noise/High-Speed Switching Specifications

ROHM offers 2 types of super junction MOSFETs, a low noise type (R6xxxENx series) and a high-speed switching model (R6xxxKNx series), available in various package types in both 600V and 650V withstand voltages.
The R6xxxENx series places an emphasis on ease-of-use, and achieves superior performance in noise-sensitive applications.
The R6xxxKNx series is focused on high efficiency and delivers excellent performance in applications demanding high-speed switching.
Both the R6xxxENx and R6xxxKNx series are offered in the same ON resistances, making it possible to select the ideal model based on set needs.
An 800V product is also available for high-speed switching specifications, achieving the industry's highest level of performance.

Low Noise Specifications: R60xxENx/R65xxENx Series

The R6xxxENx series are low-noise products that place an emphasis on ease-of-use.
As a reaction to superior ON resistance and switching performance over conventional planar MOSFETs, super junction MOSFETs typically suffer from degraded noise characteristics. However, the R6xxxENx series utilize an optimized internal gate construction that achieves lower noise, resulting in minimal noise-induced loss.
This makes them ideal for applications seeking to reduce noise, such as audio and lighting equipment.
In addition, they provide a level of noise performance equivalent to conventional planar types, making replacement easy.

VDS=600V		Package
		New SOT-223-3	TO252	LPTS	TO220FM	TO3PF	TO247
Ron typ (mΩ)	2800		R6002END3
	900	NEWR6004END4	R6004END3	R6004ENJ	R6004ENX
	570		R6007END3	R6007ENJ	R6007ENX
	500		R6009END3	R6009ENJ	R6009ENX
	340		R6011END3	R6011ENJ	R6011ENX
	260			R6015ENJ	R6015ENX	R6015ENZ
	170			R6020ENJ	R6020ENX	R6020ENZ	R6020ENZ4
	150			R6024ENJ	R6024ENX	R6024ENZ	R6024ENZ4
	115				R6030ENX	R6030ENZ	R6030ENZ4
	92					R6035ENZ	R6035ENZ4
	66						R6047ENZ4
	38						R6076ENZ4

VDS=650V		Package
		TO252	LPTS	TO220FM	TO3PF	TO247
Ron typ (mΩ)	3000	☆R6502END3
	955	R6504END3	R6504ENJ	R6504ENX
	605	R6507END3	R6507ENJ	R6507ENX
	530	R6509END3	R6509ENJ	R6509ENX
	360	R6511END3	R6511ENJ	R6511ENX
	280		R6515ENJ	R6515ENX	R6515ENZ
	185		R6520ENJ	R6520ENX	R6520ENZ	R6520ENZ4
	160		R6524ENJ	R6524ENX	R6524ENZ	R6524ENZ4
	125			R6530ENX	R6530ENZ	R6530ENZ4
	98				R6535ENZ	R6535ENZ4
	70					R6547ENZ4
	40					R6576ENZ4

☆：Under Development

High-Speed Switching Specifications: R60xxKNx/R65xxKNx/R80xxKNx Series

The R6xxxKNx series are high-speed switching products that place an emphasis on high efficiency. Optimizing the internal MOSFET structure based on the low-noise R6xxxENx series improves the gate charge characteristics (which is affected by switching speed).
This makes it possible to achieve higher efficiency via high-speed switching without sacrificing the ease-of-use provided by the R6xxxENx series, contributing to higher efficiency in PFC and LLC circuits.
An 800V product is also available for high-speed switching specifications, achieving the industry's highest level of performance.

VDS=600V		Package
		New SOT-223-3	TO252	LPTS	TO220FM	TO3PF	TO247
Ron typ (mΩ)	1300	NEWR6003KND4	R6003KND3
	900		☆R6004KND3	R6004KNJ	R6004KNX
	720	NEWR6006KND4	R6006KND3	☆R6006KNJ	R6006KNX
	570		R6007KND3	R6007KNJ	R6007KNX
	500		R6009KND3	R6009KNJ	R6009KNX
	340		R6011KND3	R6011KNJ	R6011KNX
	260			R6015KNJ	R6015KNX	R6015KNZ
	170			R6020KNJ	R6020KNX	R6020KNZ	R6020KNZ4
	150			R6024KNJ	R6024KNX	R6024KNZ	R6024KNZ4
	115				R6030KNX	R6030KNZ	R6030KNZ4
	92					R6035KNZ	R6035KNZ4
	66						R6047KNZ4
	38						R6076KNZ4

☆：Under Development

VDS=650V		Package
		TO252	LPTS	TO220FM	TO3PF	TO247
Ron typ (mΩ)	1400	☆R6503KND3
	955	R6504KND3	R6504KNJ	R6504KNX
	605	R6507KND3	R6507KNJ	R6507KNX
	530	R6509KND3	R6509KNJ	R6509KNX
	360	R6511KND3	R6511KNJ	R6511KNX
	280		R6515KNJ	R6515KNX	R6515KNZ
	185		R6520KNJ	R6520KNX	R6520KNZ	R6520KNZ4
	160		R6524KNJ	R6524KNX	R6524KNZ	R6524KNZ4
	125			R6530KNX	R6530KNZ	R6530KNZ4
	98				R6535KNZ	R6535KNZ4
	70					R6547KNZ4
	40					R6576KNZ4

☆：Under Development

VDS=800V		Package
		TO252	TO220FM	TO247
Ron typ (mΩ)	7200	☆R8001KND3
	3500	NEWR8002KND3	NEWR8002KNX
	1500	NEWR8003KND3	NEWR8003KNX
	750	NEWR8006KND3	NEWR8006KNX
	500		NEWR8009KNX
	370		NEWR8011KNX	☆R8011KNZ4
	200		NEWR8019KNX	☆R8019KNZ4
	80			☆R8052KNZ4

☆：Under Development

3rd Generation PrestoMOS™: R60xxJNx Series

		Package
		New SOT-223-3	TO252	LPTS	TO220FM	TO3PFF	TO247
Ron typ (mΩ)	2500	NEWR6002JND4
	1600	NEWR6003JND4
	1100		R6004JND3	R6004JNJ	R6004JNX
	720		R6006JND3	R6006JNJ	R6006JNX
	600		R6007JND3	R6007JNJ	R6007JNX
	450		R6009JND3	R6009JNJ	R6009JNX
	350			R6012JNJ	R6012JNX
	220			R6018JNJ	R6018JNX
	180			R6020JNJ	R6020JNX	R6020JNZ	R6020JNZ4
	140				R6025JNX		R6025JNZ4
	110				R6030JNX	R6030JNZ	R6030JNZ4
	90						R6042JNZ4
						R6050JNZ	R6050JNZ4
	45						R6070JNZ4

• R60xxJNx Series SPICE Models DOWNLOAD PAGE

Feature ① Industry-leading recovery characteristics

ROHM’s PrestoMOS™ series utilizes original patented technology to accelerate the parasitic diode, achieving the industry’s fastest reverse recovery time (trr) - a key characteristic. However, faster diode speeds typically generates steep changes in the current, which tends to increase oscillation.
For our 3rd Generation PrestoMOS™ (R60xxJNx Series), structural optimization makes oscillation difficult during recovery. This facilitates the design and implementation of countermeasures by the customer against oscillation, making them ideal for applications experiencing oscillation during recovery.

Feature ② Pursuing greater ease-of-use

ROHM’s PrestoMOS™ series is designed for bridge-type circuits and motor inverters requiring high short-circuit breakdown tolerance and self turn-ON prevention. Low short-circuit breakdown tolerance increases the possibility of MOSFET breakdown, while the occurrence of self turn ON can lead to significant power loss.
The R60xxJNx series of 3rd Generation PrestoMOS™ feature an optimized internal structure that makes it possible to clear both of these issues.
Compared to the latest competitor products, class-leading short-circuit breakdown tolerance is achieved, providing a greater level of safety. In addition, self turn ON prevention is ensured, minimizing operating power loss.

3rd Generation PrestoMOS™: R60xxRNx Series

Part No.	Data Sheet	Polarity [ch]	VDSS [V]	ID [A]	PD [W] *TC=25°C	RDS(on) (Typ.) [mΩ] *VGS=15V	Qg (Typ.) [nC] *VGS=15V	trr (Typ.) [ns]	Package
R6004RND3		N	600	4	60	1,330	10.5	40	TO-252 <DPAK>
R6007RND3				7	96	730	17.5	50
R6009RND3				9	126	510	22.5	55

Feature　Fastest Reverse Recovery Time Characteristics, Achieving Lower Power Consumption

An industry-best trr of 40ns is achieved by improving conventional lifetime control technology, reducing switching losses by approx. 30% over general products that translates to lower application power loss.
At the same time, the newly developed Super Junction structure reduces noise characteristics (which are inversely related to faster trr) by about 15dB compared to standard products (under ROHM measurement conditions at 40MHz).

*ROHM July 13^th, 2023 study