Discrete Semiconductor Devices
ROHM is engaged in two businesses related to discrete semiconductor devices: power devices and small-signal devices. Power devices are expected to grow in the future as they can contribute greatly to saving energy and miniaturization. In particular, in the SiC power device business, which can contribute to a decarbonized society, we are aiming to build a system that can provide products from wafer materials to achieve the top share in the industry and contribute not only to sales but also to the environment. In the small-signal device business, we will continue to secure further earnings and maintain the top market share by further improving productivity.
Performance by segment
FY ending March 2023
-
■Discrete Semiconductor
Devices- 2,122billion yen
- 41.8%
- ■ICs 2,337 billion yen 46.0%
- ■Modules 343 billion yen 6.8%
- ■Others 276 billion yen 5.4%
Sales
5,078billion yen
Sales by application
FY ending March 2023
-
Automotive
45.2%
-
Industrial
24.0%
-
Consumer
17.0%
-
Communication
2.6%
-
Computer&Storage
11.3%
Discrete
Semiconductor
Devices Net Sales
2,122billion yen
Key products

Small-signal devices
Used universally in a variety of applications. Get the world’s number 1 market share

Power devices
Core components of power and power supply systems and inverters. Silicon power transistors, power diodes, IGBTs, etc., mainly used for power conversion.+

SiC power devices
These have excellent heat resistance and performance at high voltage drive. As next-generation low-loss semiconductors, they are attracting high expectations as products that will contribute to the spread of all types of xEVs, further power efficiency, and a decarbonized society.
TOPICS |
Toward the Realization of a Sustainable Society
Contributing to energy conservation not only with SiC, but also GaN devices, the portfolio of which is being strengthened
With the increase of IoT devices, improving the power conversion efficiency and downsizing devices such as servers has become an important social issue. GaN devices are expected to be utilized as devices that contribute to lower power consumption and miniaturization of various switching power supplies because they have lower ON-resistance and superior high-speed switching performance compared to silicon devices.
ROHM has developed a product that applies the industry’s highest 8V gate withstand voltage technology to a 150V withstand voltage GaN device for various power supply circuits, thanks to its unique structure. In April 2022, ROHM entered a strategic partnership with Delta Electronics, a global power supply manufacturer, for the development and production of next-generation semiconductor GaN power devices. We also plan to produce GaN IPMs with built-in analog ICs, aiming to expand our product lineup as early as possible.

