Discrete Semiconductor Devices - Power Devices
Expanding the sales of power devices and developing them into a core business
Having launched mass production of GaN devices in addition to devices made with Si and SiC, ROHM is contributing to the reduced energy use of customers and miniaturization by providing optimal solutions for the particular use. With the advent of new applications such as AI servers in addition to EVs and HEVs/PHEVs, there is growing demand for power devices that handle large currents and voltages. In FY2024, sales fell year on year due to transitory market conditions, but the medium- and long-term outlook remains unchanged. Through technical capabilities that lead the industry, we will capture new market share and accelerate business growth.
An SiC business leading the industry through innovative technologies and cost competitiveness
In order to remain a technology leader, ROHM will accelerate the development of SiC power devices to a speed that rivals cannot match. As a result of a 30% increase in on resistance per unit surface area of fifth-generation SiC MOSFETs compared to the previous generation, the products are expected to offer the greatest performance in the industry. In 2024, we launched mass production of TRCDRIVE packTM, which have been adopted by several EV manufacturers because of their high power density and ease of installation. Following steady progress in introducing larger diameter wafers in order to boost production efficiency, we launched shipments of mass produced 8-inch wafer samples for certification. We will also strive to further improve cost competitiveness by constructing a production line for products that make use of 8-inch wafers.
Performance by segment
FY ending March 2025
-
■Discrete Semiconductor Devices
- 187.0billion yen
- 42%
- ■ICs
203.8billion yen 45% - ■Modules
32.5billion yen 7% - ■Others
25.0billion yen 6%
Sales
448.4billion yen
Sales by application
FY ending March 2025
-
Automotive
57%
-
Industrial
17%
-
Consumer
14%
-
Communication
2%
-
Computer&Storage
9%
Discrete Semiconductor Devices Net sales
187.0billion yen
ROHM’s Position (2024)
Worldwide power device market
- Total market
- 27,751million U.S. dollars
Power transistors
- Total market
- 23,912million U.S. dollars
Power diodes
- Total market
- 3,839million U.S. dollars
Source: Competitive Landscaping Tool CLT, Annual 2Q24
Key products
SiC power devices
We offer a broad lineup of bare chips, discrete products, and modules that contribute to miniaturization and efficiency in high-power applications.
Power MOSFETs and IGBTs
These products are used in power electronics equipment including solar power generation equipment and power supply systems, and can achieve energy saving by reducing power consumption.

Power diodes
Through overwhelming production volume and an extensive lineup, these products meet the requirements of numerous applications in areas including consumer, industrial equipment, and automotive.
TOPICS|
Toward the Realization of a Sustainable Society
Development of a new 2-in-1 SiC molded module
Equipped with features including high power density and a unique arrangement of terminals, TRCDRIVE pack™ contributes to solving major issues in the miniaturization, high efficiency, and man-hour reduction required for traction inverters. The module adopts ROHM’s unique structure that maximizes heat dissipation area and is equipped with the latest SiC MOSFET, achieving an industry-leading power density 1.5 times that of general products. The control signal terminals at the top of the module, equipped with press-fit pins, enable connection simply by pressing the gate driver board from the top, and greatly reduce installation man-hours. The module further maximizes the current path in the main current wiring and achieves low inductance (5.7nH) through a two-layer wiring structure, contributing to low losses during switching. Although the product is a module, we have established a mass production system like that of a discrete product. Production capacity of the module is about 30 times that of conventional, general SiC case-type modules.