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Discrete Semiconductor Devices - Power Devices

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Expanding the sales of power devices and developing them into a core business

Having launched mass production of GaN devices in addition to devices made with Si and SiC, ROHM is contributing to the reduced energy use of customers and miniaturization by providing optimal solutions for the particular use. With the advent of new applications such as AI servers in addition to EVs and HEVs/PHEVs, there is growing demand for power devices that handle large currents and voltages. In FY2024, sales fell year on year due to transitory market conditions, but the medium- and long-term outlook remains unchanged. Through technical capabilities that lead the industry, we will capture new market share and accelerate business growth.

An SiC business leading the industry through innovative technologies and cost competitiveness

In order to remain a technology leader, ROHM will accelerate the development of SiC power devices to a speed that rivals cannot match. As a result of a 30% increase in on resistance per unit surface area of fifth-generation SiC MOSFETs compared to the previous generation, the products are expected to offer the greatest performance in the industry. In 2024, we launched mass production of TRCDRIVE packTM, which have been adopted by several EV manufacturers because of their high power density and ease of installation. Following steady progress in introducing larger diameter wafers in order to boost production efficiency, we launched shipments of mass produced 8-inch wafer samples for certification. We will also strive to further improve cost competitiveness by constructing a production line for products that make use of 8-inch wafers.

Performance by segment

FY ending March 2025

  • ■Discrete Semiconductor Devices

    • 187.0billion yen
    • 42%
    • ■ICs 
      203.8billion yen 45%
    • ■Modules 
      32.5billion yen 7%
    • ■Others 
      25.0billion yen 6%

Sales

448.4billion yen

Sales by application

FY ending March 2025

  • Automotive

    57%

  • Industrial

    17%

  • Consumer

    14%

  • Communication

    2%

  • Computer&Storage

    9%

Discrete Semiconductor Devices Net sales

187.0billion yen

ROHM’s Position (2024)

Worldwide power device market

Total market
27,751million U.S. dollars
ROHM’s share

10th

3.0%

Power transistors

Total market
23,912million U.S. dollars
ROHM’s share

10th

2.4%

Power diodes

Total market
3,839million U.S. dollars
ROHM’s share

4th

6.6%

Source: Competitive Landscaping Tool CLT, Annual 2Q24

Key products

SiC power devices

SiC power devices

We offer a broad lineup of bare chips, discrete products, and modules that contribute to miniaturization and efficiency in high-power applications.

Power MOSFETs and IGBTs

Power MOSFETs and IGBTs

These products are used in power electronics equipment including solar power generation equipment and power supply systems, and can achieve energy saving by reducing power consumption.

Power diodes

Power diodes

Through overwhelming production volume and an extensive lineup, these products meet the requirements of numerous applications in areas including consumer, industrial equipment, and automotive.

Si power diodes

TOPICS|
Toward the Realization of a Sustainable Society

Development of a new 2-in-1 SiC molded module

Equipped with features including high power density and a unique arrangement of terminals, TRCDRIVE pack™ contributes to solving major issues in the miniaturization, high efficiency, and man-hour reduction required for traction inverters. The module adopts ROHM’s unique structure that maximizes heat dissipation area and is equipped with the latest SiC MOSFET, achieving an industry-leading power density 1.5 times that of general products. The control signal terminals at the top of the module, equipped with press-fit pins, enable connection simply by pressing the gate driver board from the top, and greatly reduce installation man-hours. The module further maximizes the current path in the main current wiring and achieves low inductance (5.7nH) through a two-layer wiring structure, contributing to low losses during switching. Although the product is a module, we have established a mass production system like that of a discrete product. Production capacity of the module is about 30 times that of conventional, general SiC case-type modules.

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