Discrete Semiconductor Devices - Power Devices
Making ROHM synonymous with power devices through fifth-generation SiC MOSFET development and making molded modules the de facto standard
Whereas CPUs and memory associated with semiconductors can be compared to the “brain” in applications, power devices can be compared to “muscles.” Power devices contribute to enhanced efficiency in power conversion throughout daily life.
ROHM offers a diverse lineup of products. In addition to IGBTs, SJMOSs, power transistors, power diodes, and other Si-based products, ROHM is focusing on SBDs and MOSFETs made of SiC. We have also begun mass production of HEMTs made from GaN. There are also IPMs and power modules that are mounted with multiple devices including these products.
Optimal power devices for each customer differs depending on the power, frequencies, system costs, and other factors on the customer side. The reason we are able to expand our market share in power devices despite ROHM being a latecomer to the market is because we hold an application-based perspective that lets us propose the optimal combinations of devices and operating conditions matched to the customer’s topology (circuit configurations). To solve customer issues, we collaborate with the System Solutions Engineering Headquarters and FAEs in Technical Centers around the world.
The SiC power device market is continuing to grow, despite the influence of conditions in the xEV traction inverter market, which is predicted to account for about 70% of the SiC power device market. Winning in this market will require that we continue to lead in technology as well as in customer support and cost competitiveness. Our fifth-generation MOSFET will enter mass production in FY2025. Our TRCDRIVE PACK™ molded module offers value to customers through its enhancement of power density and ease of installation. Its high compatibility with mass production, in the same manner as discrete semiconductor devices, is another strength of the product, which we aim to make a de facto standard.
While we will naturally pursue sales and market share, we also aim to make the name ROHM synonymous with power devices, and intend to earn a position of trust among customers through our technology, human resources, quality, and supply.
Performance by segment
FY ending March 2024
-
■Discrete Semiconductor Devices
- 201.9billion yen
- 43.2%
- ■ICs
207.2billion yen 44.3% - ■Modules
32.9billion yen 7.0% - ■Others
25.7billion yen 5.5%
Sales
467.7billion yen
Sales by application
FY ending March 2024
-
Automotive
54.3%
-
Industrial
21.9%
-
Consumer
13.3%
-
Communication
2.4%
-
Computer&Storage
8.1%
Discrete Semiconductor Devices Net sales
201.9billion yen
ROHM’s Position (2023)
Worldwide power device market
- Total market
- 30,026million U.S. dollars
Power transistors
- Total market
- 25,713million U.S. dollars
Power diodes
- Total market
- 4,313million U.S. dollars
Source: Competitive Landscaping Tool CLT, Annual 2Q24
Key products
SiC power devices
We offer a broad lineup of bare chips, discrete products, and modules that contribute to miniaturization and efficiency in high-power applications.
Power MOSFETs and IGBTs
These products are used in power electronics equipment including solar power generation equipment and power supply systems, and can achieve energy saving by reducing power consumption.
Power diodes
Through overwhelming production volume and an extensive lineup, these products meet the requirements of numerous applications in areas including consumer, industrial equipment, and automotive.
TOPICS｜
Toward the Realization of a Sustainable Society
Development of a new 2-in-1 SiC molded module
Equipped with features including high power density and a unique arrangement of terminals, TRCDRIVE pack™ contributes to solving major issues in the miniaturization, high efficiency, and man-hour reduction required for traction inverters. The module adopts ROHM’s unique structure that maximizes heat dissipation area and is equipped with the latest SiC MOSFET, achieving an industry-leading power density 1.5 times that of general products. The control signal terminals at the top of the module, equipped with press-fit pins, enable connection simply by pressing the gate driver board from the top, and greatly reduce installation man-hours. The module further maximizes the current path in the main current wiring and achieves low inductance (5.7nH) through a two-layer wiring structure, contributing to low losses during switching. Although the product is a module, we have established a mass production system like that of a discrete product. Production capacity of the module is about 30 times that of conventional, general SiC case-type modules.
