SiC MOSFETs

ROHM 4th Gen SiC MOSFETs

Key Features

1.Achieves industry-leading low ON resistance with improving short-circuit ruggedness

Nevertheless, with 4th Gen SiC MOSFETs, ROHM has successfully reduced ON resistance by 40% compared to conventional products with improving short-circuit ruggedness, through device structure improvements based on its original double-trench design. The result: is a robust power switching device with the lowest ON resistance in the industry. (ROHM Feb 2022 study)

2.Minimizes switching loss by drastically reducing parasitic capacitance

ROHM’s 4th Gen MOSFETs achieve 50% lower switching loss over conventional products by significantly reducing the gate-drain capacitance (Cgd).

3.Supports 15V Gate-Source voltage, improving application design freedom

In contrast to the 18V Gate-Source voltage (Vgs) required in the 3rd Generation and earlier SiC MOSFETs, these 4th Gen products support a more flexible gate voltage range (15-18V), enabling to design a gate drive circuit that can also be used for IGBTs.

Application Example: Traction Inverter

6% electricity consumption reduction can be achieved over IGBT solutions by significantly improving the efficiency mainly in the high torque and low rotational speed range when the 4th Gen. SiC MOSFET is used in the traction inverters (calculated using the WLTC fuel economy test, an international standard).

Supporting Content for ROHM 4th Gen SiC MOSFETs

Evaluation board

4th Generation SiC MOSFET Half Bridge Evaluation Board
P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001

The P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001 series of evaluation boards were developed for TO-247N/TO-247-4L package 4th gen SiC MOSFETs. Onboard gate driver and peripheral circuits reduce the number of man-hours required for design and evaluation.

• User Guide
• Product Specification

Evaluation Board HB2637L-EVK-301

The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

• User Guide

EVK Simulatrion (ROHM Solution Simulator)
・P05CT4018KR-EVK-001 Double Pulse Test
・P04SCT4018KE-EVK-001 Double Pulse Test
・HB2637L-EVK-301 Double Pulse Test

We have released the double-pulse test simulation environment with the evk simulation model.
The simulation circuit includes EVK's pattern parasitic inductor and can simulate the operating waveforms of 4G-SiC MOSFETs with high accuracy. Simulation conditions such as operating voltage, gate drive circuit, and snubber circuit constants can also be changed. It can be used to reduce man-hours during evaluation of actual devices and for verification before board prototyping.

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test

Documents

White Paper

• 4 Steps for Successful Thermal Designing of Power Devices
• New SPICE Models with ImprovedSimulation Speed for PowerSemiconductors Are Released!

Application Note

• 4th Gen SiC MOSFETs Discrete Package:Characteristics and Precautions for Circuit Design Application Note
• 5kW Inverter Circuit Using 4th Generation SiC MOSFETs
• Application Benefits of Using 4th Generation SiC MOSFETs

Design model

Part Number	Drain-source Voltage[V]	Drain-source On-state Resistance (Typ.(mΩ)	Package	SPICE Model?	PLECS Model?	PSIM Model?	PCB Library?
SCT4045DE	750	45	TO-247N	(L1,L2,L3)
SCT4026DE		26		(L1,L2,L3)
SCT4013DE		13		(L1,L2,L3)
SCT4062KE	1200	62		(L1,L2,L3)
SCT4036KE		36		(L1,L2,L3)
SCT4018KE		18		(L1,L2,L3)
SCT4045DR	750	45	TO-247-4L	(L1,L2,L3)
SCT4026DR		26		(L1,L2,L3)
SCT4013DR		13		(L1,L2,L3)
SCT4062KR	1200	62		(L1,L2,L3)
SCT4036KR		36		(L1,L2,L3)
SCT4018KR		18		(L1,L2,L3)
SCT4045DW7	750	45	TO-263-7L	(L1,L2,L3)
SCT4026DW7		26		(L1,L2,L3)
SCT4013DW7		13		(L1,L2,L3)
SCT4062KW7	1200	62		(L1,L2,L3)
SCT4036KW7		36		(L1,L2,L3)
SCT4018KW7		18		(L1,L2,L3)

Simulations (Login Required)

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test

TO-247N (3pin)

• [4th Gen SiC] A-011b. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016b. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

TO-247-4L (4pin)

• [4th Gen SiC] A-011a. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016a. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

SiC MOSFET Support Content

Evaluation Board

Category		SiC Product	Image	Part No.	User Guide	Purchase Board
SiC-MOS	Evaluation Board	SCT4XXX series Trench(4th Generation) TO-247-N		NEW P04SCT4018KE-EVK-001	User Guide Product Specification	Online Distributors
		SCT4XXX series Trench(4th Generation) TO-247-4L		NEW P05SCT4018KR-EVK-001		Online Distributors
		SCT3XXX series Trench(3rd Generation) TO-247-4L		P02SCT3040KR-EVK-001	User Guide Product Specification	Online Distributors

Documents

White Paper

• 4 Steps for Successful Thermal Designing of Power Devices
• Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
• The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
• LEADRIVE: Design, Test And System Evaluation Of Silicon Carbide Power Modules And Motor Control Units
• Solving The Challenges Of Driving SiC MOSFETs With New Packaging Developments

Application Note

• 4th Gen SiC MOSFETs Discrete Package:Characteristics and Precautions for Circuit Design Application Note
• 5kW Inverter Circuit Using 4th Generation SiC MOSFETs
• Application Benefits of Using 4th Generation SiC MOSFETs
• 5kW High-Efficiency Fan-less Inverter
• 800V Three-Phase Output LLC DC/DC Resonant Converter
• Improvement Of Switching Loss By Driver Source
• Basics and Design Guidelines for Gate Drive Circuits

Technical Articles

Schematic Design ＆ Verification

• New SPICE Models with ImprovedSimulation Speed for PowerSemiconductors Are Released!
• Oscillation countermeasures for MOSFETs in parallel
• Application Note for SiC Power Devices and Modules
• Calculating Power Loss from Measured Waveforms
• Calculation of Power Dissipation in Switching Circuit
• Method for Monitoring Switching Waveform
• Precautions during gate-source voltage measurement for SiC MOSFET
• Snubber circuit design methods for SiC MOSFET
• Gate-source voltage behaviour in a bridge configuration
• Gate-Source Voltage Surge Suppression Methods
• Importance of Probe Calibration When Measuring Power: Deskew
• Impedance Characteristics of Bypass Capacitor
• Basics and Design Guidelines for Gate Drive Circuits
• SiC MOSFET Layout Design Considerations
• Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Thermal Design

• What Is Thermal Design
• Basics of Thermal Resistance and Heat Dissipation
• Method for Calculating Junction Temperature from Transient Thermal Resistance Data
• Notes for Temperature Measurement Using Thermocouples
• Two-Resistor Model for Thermal Simulation
• Notes for Temperature Measurement Using Forward Voltage of PN Junction
• What is a Thermal Model? (SiC Power Device)
• How to Use Thermal Models
• Measurement Method and Usage of Thermal Resistance RthJC
• Precautions When Measuring the Rear of the Package with a Thermocouple

Models ＆ Tools

Simulations (Login Required)

TO-247N (3pin)

• [4th Gen SiC] A-011b. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016b. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

TO-247-4L (4pin)

• [4th Gen SiC] A-011a. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016a. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test
• A-001. Boost PFC V_IN=200V, I_IN=2.5A BCM
• A-002. Boost PFC V_IN=200V, I_IN=2.5A CCM
• A-003. Boost PFC V_IN=200V, I_IN=2.5A CCM Synchronous FETs
• A-004. Boost PFC V_IN=200V, I_IN=2.5A DCM
• A-005. Boost PFC V_IN=200V, I_IN=2.5A DCM Synchronous FETs
• A-006. Interleaved PFC V_IN=200V, I_IN=2.5A CCM
• A-008. Interleaved PFC V_IN=200V, I_IN=2.5A DCM
• A-012. Diode-Bridgeless PFC V_IN=200V, I_IN=2.5A BCM
• B-011. 3-Phase 3-level NPC-T Inverter P_OUT=10kW
• B-012. 3-Phase 3-level NPC-I Inverter P_OUT=10kW
• C006. DC-DC Converter, Buck Converter Vo=250V Io=20A
• C007. DC-DC Converter, Buck Converter 2-Phase Vo=250V Io=40A
• C010. DC-DC Converter, Flyback Converter V_IN=800V Vo=25V Io=10A
• C011. DC-DC Converter, Forward Converter V_IN=500V Vo=25V Io=10A
• C012. DC-DC Converter, LLC Buck Converter Vo=12V Io=250A
• C013. DC-DC Converter, Phase-Shift Buck Converter Vo=12V Io=250A
• C014. DC-DC Converter, Quasi-Resonant Converter V_IN=800V Vo=25 Io=10A
• ROHM Solution Simulator Power Device User's Guide for Inverter