SiC MOSFETs

SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.

ROHM’s 4th Generation SiC MOSFET

Our latest 4th Gen SiC MOSFETs provide industry-leading low ON resistance with improving short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.

This application note describes the features of the 4th Gen SiC MOSFET discrete package products and explains in more detail how to obtain their maximum performance.

Discrete package roadmap for SiC MOSFET and SiC SBD

The discrete packages on sale and under development.Discrete package roadmap for SiC MOSFET and SiC SBDDiscrete package roadmap for SiC MOSFET and SiC SBD

Easy Part Finder

 
Drain-source Voltage[V] Drain-source On-state Resistance(Typ.)[mΩ] TO-263-7L
TO-263-7L
Dimensions
TO-247-4L
TO-247-4L
Dimensions
TO-263CA-7LSHYAD
TO-263CA-7LSHYAD
TO-3PFM
TO-3PFM
Dimensions
TO-247N
TO-247N
Dimensions
TO-263-7LA
TO-263-7LA
Dimensions
650 17.0

SCT3017AL

SCT3017ALHR

650 22.0

SCT3022AL

SCT3022ALHR

650 30.0

SCT3030AW7

SCT3030AR

SCT3030ARHR

SCT3030AL

SCT3030ALHR

650 60.0

SCT3060AW7

SCT3060AR

SCT3060ARHR

SCT3060AL

SCT3060ALHR

650 80.0

SCT3080AW7

SCT3080AR

SCT3080ARHR

SCT3080AL

SCT3080ALHR

650 120.0

SCT3120AW7

SCT3120AL

SCT3120ALHR

750 13.0

SCT4013DW7

SCT4013DR

SCT4013DE

750 26.0

SCT4026DW7HR

SCT4026DW7

SCT4026DR

SCT4026DRHR

SCT4026DE

SCT4026DEHR

SCT4026DWA

SCT4026DWAHR

750 45.0

SCT4045DW7HR

SCT4045DW7

SCT4045DR

SCT4045DRHR

SCT4045DE

SCT4045DEHR

SCT4045DWA

SCT4045DWAHR

1200 18.0

SCT4018KW7

SCT4018KR

SCT4018KE

NewSCT4018KWA

1200 22.0

SCT3022KL

SCT3022KLHR

1200 30.0

SCT3030KL

SCT3030KLHR

1200 36.0

SCT4036KW7

SCT4036KR

SCT4036KRHR

SCT4036KE

SCT4036KEHR

NewSCT4036KWA

1200 40.0

SCT3040KW7

SCT3040KR

SCT3040KRHR

SCT3040KL

SCT3040KLHR

1200 62.0

SCT4062KW7HR

SCT4062KW7

SCT4062KR

SCT4062KRHR

SCT4062KE

SCT4062KEHR

SCT4062KWAHR

SCT4062KWA

1200 80.0

SCT3080KW7

SCT3080KR

SCT3080KRHR

SCT2080KE

SCT3080KL

SCT2080KEHR

SCT3080KLHR

1200 105.0

SCT3105KW7

SCT3105KR

SCT3105KRHR

SCT3105KL

SCT3105KLHR

1200 160.0

SCT3160KW7

SCT3160KW7HR

SCT2160KE

SCT3160KL

SCT3160KLHR

SCT2160KEHR

SCT3160KWA

SCT3160KWAHR

1200 280.0

SCT2280KE

SCT2280KEHR

1200 450.0

SCT2450KE

SCT2450KEHR

1700 750.0

NewSCT2750NWC

1700 1150.0

NewSCT2H12NWB

SCT2H12NZ

Parametric Search

 
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      Supporting Information

       

      ROHM 4th Gen SiC MOSFETs

      Our latest 4th gen SiC MOSFETs provides industry-leading low ON resistance with improving short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.

      Key Features

      1.Achieves industry-leading low ON resistance with improving short-circuit ruggedness

      Nevertheless, with 4th Gen SiC MOSFETs, ROHM has successfully reduced ON resistance by 40% compared to conventional products with improving short-circuit ruggedness, through device structure improvements based on its original double-trench design. The result: is a robust power switching device with the lowest ON resistance in the industry. (ROHM Feb 2022 study)

      2.Minimizes switching loss by drastically reducing parasitic capacitance

      ROHM’s 4th Gen MOSFETs achieve 50% lower switching loss over conventional products by significantly reducing the gate-drain capacitance (Cgd).

      3.Supports 15V Gate-Source voltage, improving application design freedom

      In contrast to the 18V Gate-Source voltage (Vgs) required in the 3rd Generation and earlier SiC MOSFETs, these 4th Gen products support a more flexible gate voltage range (15-18V), enabling to design a gate drive circuit that can also be used for IGBTs.

      Switching loss comparison
      On-resistance comparison

      Application Example: Traction Inverter

      6% electricity consumption reduction can be achieved over IGBT solutions by significantly improving the efficiency mainly in the high torque and low rotational speed range when the 4th Gen. SiC MOSFET is used in the traction inverters (calculated using the WLTC fuel economy test, an international standard).

      Application Example: Traction Inverter

       

      Supporting Content for ROHM 4th Gen SiC MOSFETs

      Evaluation board

      Evaluation board
      4th Generation SiC MOSFET Half Bridge Evaluation Board
      P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001

      The P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001 series of evaluation boards were developed for TO-247N/TO-247-4L package 4th gen SiC MOSFETs. Onboard gate driver and peripheral circuits reduce the number of man-hours required for design and evaluation.

      Evaluation board
      Evaluation Board HB2637L-EVK-301

      The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

      Evaluation board
      EVK Simulatrion (ROHM Solution Simulator)
      ・P05CT4018KR-EVK-001 Double Pulse Test
      ・P04SCT4018KE-EVK-001 Double Pulse Test
      ・HB2637L-EVK-301 Double Pulse Test

      We have released the double-pulse test simulation environment with the evk simulation model.
      The simulation circuit includes EVK's pattern parasitic inductor and can simulate the operating waveforms of 4G-SiC MOSFETs with high accuracy. Simulation conditions such as operating voltage, gate drive circuit, and snubber circuit constants can also be changed. It can be used to reduce man-hours during evaluation of actual devices and for verification before board prototyping.

      Documents

      White Paper

      Application Note

      Design model

      Part Number Drain-source Voltage[V] Drain-source On-state Resistance
      (Typ.(mΩ)
      Package SPICE
      Model?
      PLECS
      Model?
      PSIM
      Model?
      PCB
      Library?
      SCT4045DE 750 45
      TO-247N

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4026DE 26

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4013DE 13

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4062KE 1200 62

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4036KE 36

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4018KE 18

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4045DR 750 45
      TO-247-4L

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4026DR 26

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4013DR 13

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4062KR 1200 62

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4036KR 36

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4018KR 18

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4045DW7 750 45
      TO-263-7L

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4026DW7 26

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4013DW7 13

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4062KW7 1200 62

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4036KW7 36

      zip
      (L1,L2,L3)

      zip

      zip

      SCT4018KW7 18

      zip
      (L1,L2,L3)

      zip

      zip

      Simulations (Login Required)

      TO-247N (3pin)

      TO-247-4L (4pin)

       

      SiC MOSFET Support Content

      Evaluation Board

      Category SiC Product Image Part No. User Guide Purchase
      Board
      SiC-MOS  Evaluation
      Board
      SCT4XXX series Trench(4th Generation) TO-247-N NEW
      P04SCT4018KE-EVK-001
      User Guide
      Product Specification
      Online
      Distributors
      SCT4XXX series Trench(4th Generation) TO-247-4L NEW
      P05SCT4018KR-EVK-001
      Online
      Distributors
      SCT3XXX series Trench(3rd Generation) TO-247-4L P02SCT3040KR-EVK-001  User Guide
      Product Specification
      Online
      Distributors

      Documents

      White Paper

      Application Note

      Technical Articles

      Schematic Design & Verification

      Thermal Design

      Models & Tools

      Simulations (Login Required)

      ROHM Solution Simulator is a new web-based electronic circuit simulation tool that can carry out a variety of simulations, from initial development that involves component selection and individual device verification to the system-level verification stage. This makes it possible to quickly and easily implement complete circuit verification of ROHM power devices and ICs, in simulation circuits under close to actual conditions, significantly reducing application development efforts.

      TO-247N (3pin)

      TO-247-4L (4pin)

      Application

      Topology

      Related Product