S6307
1200V, 30A, Silicon-carbide (SiC) SBD Bare Die
S6307
S6307
1200V, 30A, Silicon-carbide (SiC) SBD Bare Die
S6307 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Product Detail
Part Number | S6307
Status |
Active
Package |
Unit Quantity | 0
Minimum Package Quantity | 0
RoHS |
Yes
Specifications:
Reverse Voltage[V]
1200
Continuous Forward Current[A]
30
Generation
2nd Gen
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
· Shorter recovery time· Reduced temperature dependence
· High-speed switching possible
