BST38B2P4K01-VC (New)

HSDIP20, 1200V, 38A, Full-bridge, Automotive / Industrial Grade SiC Power Module
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BST38B2P4K01-VC
(New)

BST38B2P4K01-VC (New)
HSDIP20, 1200V, 38A, Full-bridge, Automotive / Industrial Grade SiC Power Module

The BST38B2P4K01 is a high-performance SiC molded module rated for 1200V, designed with a 4-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature even under high power conditions, enabling high current handling within a compact form factor. Compared to top-side cooled discrete devices, it delivers over 3 times the power density—and 1.4 times that of other DIP modules. In PFC applications, it can reduce the mounting area by about 52%, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs. With essential power conversion circuits built into the module, it reduces design workload and enables the miniaturization of power conversion circuits in OBCs and other applications. As a key solution for next-generation automotive systems, it supports the development of high-output, compact electric powertrains.

Application Examples

  • Automotive systems: Onboard chargers, electric compressors and more.
  • Industrial Equipment: EV charging stations, V2X systems, AC servos, server power supplies, PV inverters, power conditioners, etc.

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Product Detail

 
Part Number | BST38B2P4K01-VC
Status | Recommended
Package | HSDIP20
Packing Type | Corrugated Cardboard
Unit Quantity | 180
Minimum Package Quantity | 60
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

38

Total Power Dissipation[W]

227

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Full-bridge

Package Size [mm]

38.0x31.3 (t=3.5)

Common Standard

AQG-324

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Features:

  • HSDIP20 package with the 4th Generation SiC-MOSFET
  • VDSS = 1200V
  • Low RDS(on)
  • High-speed switching possible
  • Low switching losses
  • Tvjmax = 175°C
  • Compact design
  • With high thermal conductivity isolation
  • Integrated NTC temperature sensor
  • 4.2kV AC 1s insulation

Design Resources

 
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Videos
Compact Molded Modules with Built-in SiC MOSFETs (HSDIP20) - BSTxxx1P4K01, BSTxxx2P4K01
2025-04-24 00:00:00.0 ( 1.79 MB )
The BSTxxx1P4K01 (750V) and BSTxxx2P4K01 (1,200V) are molded-type modules that incorporate four and six SiC MOSFETs, respectively. All essential circuits required for power conversion in high-power applications are integrated into a compact module package, contributing to end-product miniaturization.
The BSTxxx1P4K01 (750V) and BSTxxx2P4K01 (1,200V) are molded-type modules that incorporate four and six SiC MOSFETs, respectively. All essential circuits required for power conversion in high-power applications are integrated into a compact module package, contributing to end-product miniaturization.

Videos
X-in-1 HSDIP20 SiC Modules
2025-04-24 00:00:00.0 ( 3:13 )
Integrating ROHM SiC MOSFETs, which combine low ON resistance with high-speed switching, into the HSDIP20 package, results in industry-leading current density that enables fast charging.
Integrating ROHM SiC MOSFETs, which combine low ON resistance with high-speed switching, into the HSDIP20 package, results in industry-leading current density that enables fast charging.
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