Silicon carbide Power Module - BSM180D12P3C007 | ROHM Semiconductor - ROHM Co., Ltd.
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Silicon carbide Power Module - BSM180D12P3C007
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
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Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
180.0
Total Power Dissipation[W]
880
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.