BSM180D12P3C007
1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET

BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy * Sample *
  • Documents  
  • Tools  
  • Packaging & Quality  
  • FAQs
  • Contact Us

Product Detail

 
Part Number | BSM180D12P3C007
Status | Recommended
Package | C
Unit Quantity | 12
Minimum Package Quantity | 12
Packing Type | Corrugated Cardboard
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

180.0

Total Power Dissipation[W]

880

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Evaluation
Board

 
    • Drive Board
    • AgileSwitch 2ASC-12A1HP / EDCA2

    • BSM series (1200V, C type)
      Core Driver : 2ASC-12A1HP
      Adapter Board : EDCA2

  • Detail
    • Drive Board
    • BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

  • User's Guide Purchase Inquiry
    • Drive Board
    • TAMURA 2DU series

    • For BSM series (1200V, C / E / G type)

  • Detail
SHOW/HIDE COLUMNS
New Product List

Design Resources

 

Documents

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs

User's Guide

  • Evaluation Board User's Guide for C-type Full SiC Module (BSMGD3C12D24-EVK001)

Technical Articles

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Notes for Temperature Measurement Using Thermocouples
  • What is a Thermal Model? (SiC Power Device)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • How to Use Thermal Models
  • Optimized heat sink assembly method for effective heat dissipation
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Tools

Models

  • BSM180D12P3C007 PLECS Model
  • BSM180D12P3C007 SPICE Simulation Evaluation Circuit
  • BSM180D12P3C007 SPICE Model
  • BSM180D12P3C007 Thermal Model (lib)
  • How to Create Symbols for PSpice Models
  • Power Module Loss Simulator - 3Phase Inverter
  • Power Module Loss Simulator - Boost Converter
  • Power Module Loss Simulator - Buck Converter

Characteristics Data

  • ESD Data

Packaging & Quality

Package Information

  • Inner Structure
  • Taping Information

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Regulations