SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.
ROHM recently introduced its SCT Series of 3rd-generation trench-gate type SiC MOSFETs. Available in 6 variants(650V/1200V), these MOSFETs feature approx. 50% lower ON-resistance than 2nd-generation planar types, making them ideal for large server power supplies, UPS systems, solar power converters, and electric vehicle charging stations requiring high efficiency.
Lower switching loss package
ROHM utilizes a 7-Pin package (TO-263-7L) and a 4-Pin package (TO-247-4L) with the driver source terminals that reduce the switching and conduction loss occurs in switching elements. These packages SiC MOSFETs contributes to lower power consumption and facilitates measures against VGS surge and VDS turn OFF ringing at the evaluation stage.
In manufacturing, the ROHM SCT2080KE MOSFET improves the efficiency of pulse generators by delivering a steep rise time that increases productivity.
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[New] SCT3xxx xR series
The SCT3xxx xR series utilizes a 4-pin package (TO-247-4L) that maximizes switching performance, making it possible to reduce switching loss by up to 35% over conventional 3-pin package types (TO-247N). This contributes to lower power consumption in a variety of applications.
In recent years, the growing needs for cloud services due to the proliferation of AI and IoT has increased the demand for data centers worldwide. But for servers used in data centers, one major challenge is how to reduce power consumption as capacity and performance increase. At the same time, SiC devices are attracting attention due to their smaller loss over mainstream silicon devices in the power conversion circuits of servers. Furthermore, as the TO-247-4L package enables to reduce switching loss over conventional packages, it is expected to be adopted in high output applications such as servers, base stations, and solar power generation.
ROHM's SiC MOSFET evaluation board (P02SCT3040KR-EVK-001) is equipped with our gate driver ICs (BM6101FV-C) optimized for driving SiC devices along with multiple power supply ICs and additional discrete components that facilitate application evaluation and development. Compatibility with both the TO-247-4L and TO-247N package types enable evaluation of both packages under the same conditions. The board can be used for double pulse testing as well as the evaluation of components in boost circuits, 2-level inverters and synchronous rectification buck circuits.
4-Pin package (TO-247-4L) reduces switching loss by up to 35%
With conventional 3-pin packages (TO-247N), the effective gate voltage at the chip reduces due to the voltage dropped across the parasitic inductance of the source terminal. This causes the switching speed to reduce. Adopting the 4-pin TO-247-4L package separates the driver and power source pins, minimizing the effects of the parasitic inductance component. This makes it possible to maximize the switching speed of SiC MOSFETs, reducing total switching loss (turn ON and turn OFF) by up to 35% over conventional package.
Source ON Resistance R
|Operating Temperature Range
ROHM's SiC MOSFETs
High speed switching with low ON-resistance
SiC MOSFET enables simultaneous high speed switching with low ON-resistance - normally impossible with silicone-based products. Additional features include superior electric characteristics at high temperatures and signiﬁcantly lower switching loss, allowing smaller peripheral components to be used.
Evolution to the next generation, 3rd-Generation SiC MOSFET
ROHM is the ﬁrst in the world* to develop and mass-produce trench-type SiC MOSFETs. Achieving lower ON resistance makes it possible to reduce power loss in a variety of devices.
※October 2018 ROHM study