SCT2H12NZ - Documentation

1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET.

ROHM Featured Products

SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board
BD7682FJ-LB-EVK-402 [Input: AC 400-690V , Output: 24V DC]
Apprication Note , Presentation Document , Buy Evaluation Board
BD7682FJ-EVK-301 [Input: AC 210-480V DC 300-900V , Output: 12V DC]
Application Note, Evaluation Board User Guide, Quick Start Guide, Inquiry Evaluation Board

* This is a standard-grade product.
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User's Guide

BD7682FJ-EVK-402 Evaluation Board User's Guide
 
For driving SiC (Silicon Carbide) MOSFET. The evaluation board outputs 24 V voltage from the input of 300 Vdc to 900 Vdc. The output current supplies up to 1 A.

Application Note

Notes for Temperature Measurement Using Thermocouples
 
This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
Two-Resistor Model for Thermal Simulation
 
This application note explains the two-resistor model, which is the simplest model among thermal models used in thermal simulations. The thermal simulations mentioned three-dimensional model thermal conduction and thermal fluid analysis tools.
Notes for Temperature Measurement Using Forward Voltage of PN Junction
 
This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
What is a Thermal Model? (SiC Power Device)
 
Thermal models are models for performing simulations in relation to heat among SPICE models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains the thermal models.
How to Use Thermal Models
 
This application note explains that how to get and use the thermal models, and the simulation method.
Precautions during gate-source voltage measurement for SiC MOSFET
 
SiC MOSFET has relatively huge current and voltage change during switching operation, therefore it is needed to measure precisely for surge in between Gate and Source terminal. This application note will explain the precautions, general measurement method, connecting probes, selecting the measurement point and precaution with bridge configuration during the gate - source voltage measurement.
Method for Monitoring Switching Waveform
 
This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit.
Snubber circuit design methods for SiC MOSFET
 
This application note illustrates a way to design snubber circuit, which is one of the methods to suppress surges voltages and currents.
BD7682FL-LB Application Note
 
Quasi-resonant auxiliary power supply with 1700V SiC MOSFET
Application Note for SiC Power Devices and Modules
 
Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules.
Gate-source voltage behaviour in a bridge configuration
 
In this application note, we focus on Gate-Source voltage in MOSFET bridge configuration based on one of the simplest power circuits, a synchronous rectification boost converter to understand the switching operation in detail.
Gate-Source Voltage Surge Suppression Methods
 
This application note aims to present the best countermeasures while clarifying the causes of the surge that occurs between gate and source of the MOSFET.
Part Explanation
 
For SiC MOSFET