1200V, 10A, THD, Silicon-carbide (SiC) MOSFET - SCT2450KE
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
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Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
450.0
Drain Current[A]
10.0
Total Power Dissipation[W]
85
Junction Temperature(Max.)[℃]
175
Storage Temperature (Min.)[℃]
-55
Storage Temperature (Max.)[℃]
175
Features:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant