SCT2450KE
1200V, 10A, THD, Silicon-carbide (SiC) MOSFET

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

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Product Detail

 
Part Number | SCT2450KEGC11
Status | Recommended
Package | TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

450.0

Drain Current[A]

10.0

Total Power Dissipation[W]

85

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

Features:

・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
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