SCT2450KE
1200V, 10A, THD, Silicon-carbide (SiC) MOSFET
SCT2450KE
1200V, 10A, THD, Silicon-carbide (SiC) MOSFET
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
450
Generation
2nd Gen (Planar)
Drain Current[A]
10
Total Power Dissipation[W]
85
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Features:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
