SiC MOSFET - SCT2120AF | ROHM Semiconductor - ROHM Co., Ltd. - global
Rohm Productdetail
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Specifications:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
120
Drain Current[A]
29.0
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant