650V, 29A, THD, Silicon-carbide (SiC) MOSFET - SCT2120AF

650V 29A N-channel SiC power MOSFET

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* This is a standard-grade product.
For Automotive usage, please contact Sales.

Buy * Sample * FAQ Contact Us Data Sheet

Part Number | SCT2120AFC

Status | Active

Package | TO-220AB

Unit Quantity | 1000

Minimum Package Quantity | 50

Packing Type | Tube

RoHS | Yes

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

120.0

Drain Current[A]

29.0

Total Power Dissipation[W]

165

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant

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