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SiC MOSFET - SCT2120AF

650V 29A N-channel SiC power MOSFET

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | SCT2120AFC
Status | Active
Package | TO-220AB
Unit Quantity | 1000
Minimum Package Quantity | 50
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

120.0

Drain Current[A]

29.0

Total Power Dissipation[W]

165

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant