RJ1P10BAT (New)
Pch -100V -105A, TO-263AB, Power MOSFET
RJ1P10BAT (New)
Pch -100V -105A, TO-263AB, Power MOSFET
RJ1P10BAT is a Power MOSFET with Low on - resistance and High power package, suitable for Switching and Motor drives applications.
Product Detail
Specifications:
Package Code
TO-263AB
Applications
Switching
Number of terminal
3
Polarity
Pch
Drain-Source Voltage VDSS[V]
-100
Drain Current ID[A]
-105
RDS(on)[Ω] VGS=6V(Typ)
0.0104
RDS(on)[Ω] VGS=10V(Typ)
0.0094
RDS(on)[Ω] VGS=Drive (Typ)
0.0104
Total gate charge Qg[nC]
255
Power Dissipation (PD)[W]
201
Drive Voltage[V]
-6
trr (Typ.)[ns]
62
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
15.1×10.11 (t=4.77)
Features:
- Low on - resistance
- High power package (TO263AB)
- Pb-free plating ; RoHS compliant
- Halogen free
- 100% Rg and UIS tested
