ROHM Product Detail
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- 12 to 150V MOSFETs
- Single-Nch MOSFETs
- RJ1P12BBD
Not Recommended for New Designs
RJ1P12BBD
Nch 100V 120A Power MOSFET
Not Recommended for New Designs
RJ1P12BBD
Nch 100V 120A Power MOSFET
This product cannot be used for new designs (Not recommended for design diversion).
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Product Detail
Replacement Product For RJ1P12BBD
Part Number |
|
|
|
---|---|---|---|
Ordering Part Number | RJ1P12BBDTLL | RJ1P10BBHTL1 | RS6P100BHTB1 |
Similar Level | - | Same Pinout | Similar Specification |
Data Sheet | |||
Supply Status | Not Recommended for New Designs | Recommended | Recommended |
Package | LPTL | TO-263AB-3LSHYAD | HSOP8 (Single,TB1) |
Unit Quantity | 1000 | 800 | 2500 |
Minimum Packing Quantity | 1000 | 800 | 2500 |
Packing Type | Taping | Taping | Taping |
RoHS | Yes | Yes | Yes |
Package Code | TO-263AB | TO-263AB | HSOP8S (5x6) |
Package Size [mm] | 10.1x10.1 (t=4.7) | 8.7×10.11 (t=4.77) | 6.0x4.9 (t=1.1) |
Number of terminal | 3 | 3 | 8 |
Polarity | Nch | Nch | Nch |
V DSS [V] | 100 | 100 | 100 |
I D [A] | 120.0 | 170.0 | 100.0 |
R DS(on) (Typ) @6V[O] | - | 0.0028 | 0.0058 |
R DS(on) (Typ) @10V[O] | 0.0044 | 0.0023 | 0.0045 |
R DS(on) (Typ) @Drive[O] | 0.0052 | 0.0028 | 0.0058 |
Drive Voltage [V] | 6.0 | 6.0 | 6.0 |
Power Dissipation (PD) [W] | 178.0 | 189.0 | 104.0 |
Q g (Typ)[nC] | 51.0 | 89.0 | 29.0 |
Trr (Typ)[ns] | - | 90 | 63 |
Mounting Style | Surface mount | Surface mount | Surface mount |
Applications | - | Switching | - |
Storage Temperature (Min)[?] | -55 | -55 | -55 |
Storage Temperature (Max)[?] | 150 | 150 | 150 |
Videos & Catalogs
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Videos
Low ON-Resistance Nch Power MOSFETs RS6/RH6 Series
2023-05-15
( 2:09 )
These products utilize ROHM’s latest generation fine element structure that significantly reduces ON resistance per unit area.
These products utilize ROHM’s latest generation fine element structure that significantly reduces ON resistance per unit area.
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