RJ1P10BBH
Nch 100V 170A, TO-263AB, Power MOSFET

RJ1P10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.

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Product Detail

 
Part Number | RJ1P10BBHTL1
Status | Recommended
Package | TO-263AB-3LSHYAD
Unit Quantity | 800
Minimum Package Quantity | 800
Packing Type | Taping
RoHS | Yes

Specifications:

Package Code

TO-263AB

Applications

Switching

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

100

Drain Current ID[A]

170

RDS(on)[Ω] VGS=6V(Typ.)

0.0028

RDS(on)[Ω] VGS=10V(Typ.)

0.0023

RDS(on)[Ω] VGS=Drive (Typ.)

0.0028

Total gate charge Qg[nC]

89

Power Dissipation (PD)[W]

189

Drive Voltage[V]

6

Trr (Typ.)[ns]

90

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Package Size [mm]

10.11×15.1 (t=4.77)

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Features:

  • Low on - resistance
  • High power small mold package (TO263AB)
  • Pb-free plating ; RoHS compliant
  • 100% UIS tested
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