Bidirectional Buck-Boost converter


Unlike the inverting backboost, it uses four switches (also two switches and a diode) to convert a positive input voltage into a positive step-down or boosted output voltage. The voltage conversion ratio M is determined by the on / off duty ratio D of the main switch and is given by the following equation.
M = D / (1-D).


- Bidirectional operation
- Buck Boost converter
- A lot of choice in switching device



Key Products

Product Category Product Family Product Number Feature
Switch 750V SiC MOSFET SCT4xxxDx series The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.
650V SiC MOSFET SCT3xxxAx series Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products.
650V IGBT RGWxxTx65 series Trench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) reducing switching loss.
650V SJ MOSFET R65 serires 600 to 800V power MOSFETs using superjunction technlogy, enabling high speed switching and low on-resistance performance. Variaous choice of package are availble.
Gate Driver Galvanic Isolated gate driver BM61x4xRFV 1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.

Related Topologies

Boost Converter (Boost Diode)

Dual Buck-Boost Converter

Bipolar Boost Converter

3-Level Flying Capacitor Booster

LLC converter (Half Bridge, Diode Rectification)