3-Level Flying Capacitor Booster


In this topology, the additional voltage levels are synthesized by a capacitor, the so-called flying-capacitor.
The voltage of the flying capacitor is half of the output voltage. The capacitor can offset the output voltage with VOUT/2 in a positive and negative direction.
As the operation is three-leveled, the voltage stress on the MOSFET or Diode is decreased. This results in lower EMI, lower current, and lower voltage ripple.


- 3-level topology reduce stress on semiconductor devices
- Various choises of Boost Switch depend on system requirements
     - Lower loss SiC MOSFET, IGBT
     - Smaller Package choises from 3-leads, 4-leads or 7-leads,
- SiC Shott Key Diode provide lower loss



Key Products

Product Category Product Family Product Number Feature
Boost Switch 650V IGBT RGWxxTx65 series Trench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) reducing switching loss.
750V SiC MOSFET SCT4xxxDx series The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.
650V SiC MOSFET SCT3xxxAx series Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products.
Boost Diode 650V SiC SBD SCS3xxAx series High IFSM in spite of low VF, low leakage current provides safety design.
Gate Driver Galvanic Isolated gate driver BM61x4xRFV 1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.

Related Topologies

Boost Converter (Boost Diode)

Bidirectional Buck-Boost converter

Dual Buck-Boost Converter

Bipolar Boost Converter

LLC converter (Half Bridge, Diode Rectification)