3-Level Flying Capacitor Booster
Description
In this topology, the additional voltage levels are synthesized by a capacitor, the so-called flying-capacitor.
The voltage of the flying capacitor is half of the output voltage. The capacitor can offset the output voltage with VOUT/2 in a positive and negative direction.
As the operation is three-leveled, the voltage stress on the MOSFET or Diode is decreased. This results in lower EMI, lower current, and lower voltage ripple.
Overview
- 3-level topology reduce stress on semiconductor devices
- Various choises of Boost Switch depend on system requirements
- Lower loss SiC MOSFET, IGBT
- Smaller Package choises from 3-leads, 4-leads or 7-leads,
- SiC Shott Key Diode provide lower loss
Circuit
Key Products
| Product Category | Product Family | Product Number | Feature |
|---|---|---|---|
| Boost Switch | 650V IGBT | RGWxxTx65 series | Trench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) reducing switching loss. |
| 750V SiC MOSFET | SCT4xxxDx series | The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely. | |
| 650V SiC MOSFET | SCT3xxxAx series | Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products. | |
| Boost Diode | 650V SiC SBD | SCS3xxAx series | High IFSM in spite of low VF, low leakage current provides safety design. |
| Gate Driver | Galvanic Isolated gate driver | BM61x4xRFV | 1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins. |