• DCAC

Full bridge (H bridge) inverter (1-phase application)

Description

A simple and commonly used H-bridge type inverter. It is also called a two-level inverter because the applied voltage of each switch takes two level as Vin and 0V.

Overview

- 4 MOSFETs conform full bridge, it is also called H-bridge
- Very popular topology
- Various choises of Boost Switch depend on system requirements
     - Lower cost SJ-MOSFET
     - Lower loss SiC MOSFET, IGBT
     - Smaller Package choises from 3-leads, 4-leads or 7-leads,

Circuit

Circuit

Key Products

Product Category Product Family Product Number Feature
Full bridge 650V IGBT RGWxxTx65 series Trench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) reducing switching loss.
600V SJ MOSFET R60 serires 600 to 800V power MOSFETs using superjunction technlogy, PrestoMOSTM series enable high speed switching and low on-resistance performance. Variaous choice of package are availble.
750V SiC MOSFET SCT4xxxDx series The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.
650V SiC MOSFET SCT3xxxAx series Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products.
Gate Driver Galvanic Isolated gate driver BM61x4xRFV 1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.

Simulation

B-004 Full Bridge Inverter

Related Topologies

HERIC inverter (1-phase application)

3-Level NPC TYPE-I inverter (3-phase application)

3-Level NPC TYPE-T inverter (3-phase application)

2-Level full bridge inverter (3-phase application)