ROHM Parametric

SiC MOSFETs

SiC MOSFETs

SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.

Discrete package roadmap for SiC MOSFET and SiC SBD

The discrete packages on sale and under development.Discrete package roadmap for SiC MOSFET and SiC SBDDiscrete package roadmap for SiC MOSFET and SiC SBD

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      Supporting Information

       

      Supporting Content for ROHM SiC MOSFETs

      Evaluation board

      Evaluation board
      SiC MOSFET Half Bridge Evaluation Board
      P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001

      The P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001 series of evaluation boards were developed for TO-247N/TO-247-4L package SiC MOSFETs. Onboard gate driver and peripheral circuits reduce the number of man-hours required for design and evaluation.

      Evaluation board
      Evaluation Board HB2637L-EVK-301

      The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

      Evaluation board
      EVK Simulatrion (ROHM Solution Simulator)
      ・P05CT4018KR-EVK-001 Double Pulse Test
      ・P04SCT4018KE-EVK-001 Double Pulse Test
      ・HB2637L-EVK-301 Double Pulse Test

      We have released the double-pulse test simulation environment with the evk simulation model.
      The simulation circuit includes EVK's pattern parasitic inductor and can simulate the operating waveforms of SiC MOSFETs with high accuracy. Simulation conditions such as operating voltage, gate drive circuit, and snubber circuit constants can also be changed. It can be used to reduce man-hours during evaluation of actual devices and for verification before board prototyping.

      SiC MOSFET Support Content

      Evaluation Board

      Category SiC Product Image Part No. User Guide Purchase
      Board
      SiC-MOS  Evaluation
      Board      		 SCT4XXX series Trench(4th Generation) TO-247-N P04SCT4018KE-EVK-001 User Guide
      Product Specification      		 Online
      Distributors
      SCT4XXX series Trench(4th Generation) TO-247-4L P05SCT4018KR-EVK-001 Online
      Distributors
      SCT3XXX series Trench(3rd Generation) TO-247-4L P02SCT3040KR-EVK-001  User Guide
      Product Specification      		 Online
      Distributors

      Models ＆ Tools

      Simulations (Login Required)

      ROHM Solution Simulator is a new web-based electronic circuit simulation tool that can carry out a variety of simulations, from initial development that involves component selection and individual device verification to the system-level verification stage. This makes it possible to quickly and easily implement complete circuit verification of ROHM power devices and ICs, in simulation circuits under close to actual conditions, significantly reducing application development efforts.

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