1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3105KR (New)
SCT3105KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular. As a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).
* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
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Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105.0
Drain Current[A]
24.0
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating; RoHS compliant
- High efficiency 4pin package
- Evaluation board 'P02SCT3040KR-EVK-001'