SCT3105KR
1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3105KR
1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3105KR is an SiC MOSFET that features a trench gate structure optimized for electric vehicle charging stations, solar power inverters, and server power supplies requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).
A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105
Generation
3rd Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
23.45x16.0 (t=5.2)
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
Reference Design / Application Evaluation Kit
-
- Evaluation Board - P02SCT3040KR-EVK-001
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier - In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
- Single power supply (+12V operation)
- Supports double pulse testing up to 150A and switching up to 500kHz
- Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
- Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
- Jumper pins enable switching between negative bias/zero bias for gate drive
- Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
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