1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3105KR

SCT3105KR is an SiC MOSFET that features a trench gate structure optimized for electric vehicle charging stations, solar power inverters, and server power supplies requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).

A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

* This is a standard-grade product.
For Automotive usage, please contact Sales.
Part Number | SCT3105KRC14
Status | Recommended
Package | TO-247-4L
Unit Quantity | 240
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

105.0

Drain Current[A]

24.0

Total Power Dissipation[W]

134

Junction Temperature(Max.)[℃]

175

Storage Temperature (Min.)[℃]

-55

Storage Temperature (Max.)[℃]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating; RoHS compliant
  • High efficiency 4pin package
  • Evaluation board 'P02SCT3040KR-EVK-001'