SCT3105KR is an SiC MOSFET that features a trench gate structure optimized for electric vehicle charging stations, solar power inverters, and server power supplies requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).
A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105.0
Drain Current[A]
24.0
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
