SCT3105KRHR (New)

1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
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SCT3105KRHR
(New)

Product Detail

 
Part Number | SCT3105KRHRC15
Status | Recommended
Package | TO-247-4L
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

105

Generation

3rd Gen (Trench)

Drain Current[A]

24

Total Power Dissipation[W]

134

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

Common Standard

AEC-Q101 (Automotive Grade)

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Features:

  • Qualified to AEC-Q101
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
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