SCT3105KRHR
1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3105KRHR
1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
AEC-Q101 qualified automotive grade product. SCT3105KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105
Generation
3rd Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
23.45x16.0 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
Features:
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
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