SCT2080KE
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy * Sample *

Product Detail

 
Part Number | SCT2080KEGC11
Status | Recommended
Package | TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

80

Generation

2nd Gen (Planar)

Drain Current[A]

40

Total Power Dissipation[W]

262

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

Find Similar

Features:

・High-speed switching
・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction

Evaluation
Board

 
    • Evaluation Board
    • P01SCT2080KE-EVK-001

      • Optimized for evaluating ROHM's SCT2080KE SiC planar MOSFET (1200V/80mΩ); supports other ROHM SiC MOSFETs by changing circuit settings.
      • Evaluates MOSFETs and IGBTs at 1200V/5A (if item has a built-in inductor), 100kHz
      • Generates positive and negative bias voltages for the upper and lower arms from a single 12VDC system
      • Generates an internal gate signal for double pulse testing
      • Allows for evaluation of DC/DC converters via external supply signal
      • Flywheel enables selection of MOS body diodes, external diodes, and reverse conduction

  • Purchase Inquiry
X

Most Viewed