SCT2080KE
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

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Product Detail

 
Part Number | SCT2080KEGC11
Status | Recommended
Package | TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

80.0

Drain Current[A]

40.0

Total Power Dissipation[W]

262

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

・High-speed switching
・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction

Evaluation
Board

 
    • Evaluation Board
    • P01SCT2080KE-EVK-001

      • Optimized for evaluating ROHM's SCT2080KE SiC planar MOSFET (1200V/80mΩ); supports other ROHM SiC MOSFETs by changing circuit settings.
      • Evaluates MOSFETs and IGBTs at 1200V/5A (if item has a built-in inductor), 100kHz
      • Generates positive and negative bias voltages for the upper and lower arms from a single 12VDC system
      • Generates an internal gate signal for double pulse testing
      • Allows for evaluation of DC/DC converters via external supply signal
      • Flywheel enables selection of MOS body diodes, external diodes, and reverse conduction

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Design Resources

 

Documents

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Technical Articles

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Snubber circuit design methods for SiC MOSFET
  • Gate-source voltage behaviour in a bridge configuration
  • Gate-Source Voltage Surge Suppression Methods
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Thermocouples
  • What is a Thermal Model? (SiC Power Device)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Tools

Simulations (Login Required)

  • AC-DC PFC
    Circuit Number A001: BCM VIN=200V IIN=2.5A
  • AC-DC PFC
    Circuit Number A002: BCM Diode-Bridge-Less VIN=200V IIN=2.5A
  • AC-DC PFC
    Circuit Number A004: CCM VIN=200V IIN=2.5A
  • AC-DC PFC
    Circuit Number A005: CCM 2-Phase VIN=200V IIN=5A
  • AC-DC PFC
    Circuit Number A006: CCM Synchro VIN=200V IIN=2.5A
  • AC-DC PFC
    Circuit Number A011: DCM VIN=200V IIN=2.5A
  • AC-DC PFC
    Circuit Number A012: DCM 2-Phase VIN=200V IIN=5A
  • AC-DC PFC
    Circuit Number A014: DCM Synchro VIN=200V IIN=2.5A
  • DC-DC Converter
    Circuit Number C006: Buck Converter Vo=250V Io=20A
  • DC-DC Converter
    Circuit Number C007: Buck Converter 2-Phase Vo=250V Io=40A
  • DC-DC Converter
    Circuit Number C010: Flyback Converter VIN=800V Vo=25V Io=10A
  • DC-DC Converter
    Circuit Number C011: Forward Converter VIN=500V Vo=25V Io=10A
  • DC-DC Converter
    Circuit Number C012: LLC Buck Converter Vo=12V Io=250A
  • DC-DC Converter
    Circuit Number C013: Phase-Shift Buck Converter Vo=12V Io=250A
  • DC-DC Converter
    Circuit Number C014: Quasi-Resonant Converter VIN=800V Vo=25 Io=10A
  • Method for Exporting Circuit Data (ROHM Solution Simulator)

Models

  • SCT2080KE SPICE Simulation Evaluation Circuit
  • SCT2080KE SPICE Model
  • SCT2080KE Thermal Model (lib)
  • SCT2080KE PathWave ADS Model

Characteristics Data

  • ESD Data

Packaging & Quality

Package Information

  • Package Dimensions
  • Inner Structure
  • Taping Information
  • Moisture Sensitivity Level
  • Anti-Whisker formation
  • Condition of Soldering

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)