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SiC MOSFET - SCT2080KE

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | SCT2080KEC
Status | Active
Package | TO-247
Unit Quantity | 360
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

80

Drain Current[A]

40.0

Total Power Dissipation[W]

262

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

・High-speed switching
・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction