SiC MOSFET - SCT2080KE | ROHM Semiconductor - ROHM Co., Ltd. - global
Rohm Productdetail
SiC MOSFET - SCT2080KE
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Drain Current[A]
40.0
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
・High-speed switching・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction