SCT2080KE
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

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Product Detail

 
Part Number | SCT2080KEGC11
Status | Recommended
Package | TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

80.0

Drain Current[A]

40.0

Total Power Dissipation[W]

262

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

Features:

・High-speed switching
・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction

Evaluation
Board

 
    • Evaluation Board
    • P01SCT2080KE-EVK-001

      • Optimized for evaluating ROHM's SCT2080KE SiC planar MOSFET (1200V/80mΩ); supports other ROHM SiC MOSFETs by changing circuit settings.
      • Evaluates MOSFETs and IGBTs at 1200V/5A (if item has a built-in inductor), 100kHz
      • Generates positive and negative bias voltages for the upper and lower arms from a single 12VDC system
      • Generates an internal gate signal for double pulse testing
      • Allows for evaluation of DC/DC converters via external supply signal
      • Flywheel enables selection of MOS body diodes, external diodes, and reverse conduction

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Design Resources

 

Documents

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Technical Articles

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Snubber circuit design methods for SiC MOSFET
  • Gate-source voltage behaviour in a bridge configuration
  • Gate-Source Voltage Surge Suppression Methods
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • What Is Thermal Design
  • Basics of Thermal Resistance and Heat Dissipation
  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Thermocouples
  • What is a Thermal Model? (SiC Power Device)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Tools

Simulations (Login Required)

ROHM Solution Simulator is a new web-based electronic circuit simulation tool that can carry out a variety of simulations, from initial development that involves component selection and individual device verification to the system-level verification stage. This makes it possible to quickly and easily implement complete circuit verification of ROHM power devices and ICs, in simulation circuits under close to actual conditions, significantly reducing application development efforts.
  • AC-DC PFC A001: BCM VIN=200V IIN=2.5A
  • AC-DC PFC A002: BCM Diode-Bridge-Less VIN=200V IIN=2.5A
  • AC-DC PFC A004: CCM VIN=200V IIN=2.5A
  • AC-DC PFC A005: CCM 2-Phase VIN=200V IIN=5A
  • AC-DC PFC A006: CCM Synchro VIN=200V IIN=2.5A
  • AC-DC PFC A011: DCM VIN=200V IIN=2.5A
  • AC-DC PFC A012: DCM 2-Phase VIN=200V IIN=5A
  • AC-DC PFC A014: DCM Synchro VIN=200V IIN=2.5A
  • DC-DC Converter C006: Buck Converter Vo=250V Io=20A
  • DC-DC Converter C007: Buck Converter 2-Phase Vo=250V Io=40A
  • DC-DC Converter C010: Flyback Converter VIN=800V Vo=25V Io=10A
  • DC-DC Converter C011: Forward Converter VIN=500V Vo=25V Io=10A
  • DC-DC Converter C012: LLC Buck Converter Vo=12V Io=250A
  • DC-DC Converter C013: Phase-Shift Buck Converter Vo=12V Io=250A
  • DC-DC Converter C014: Quasi-Resonant Converter VIN=800V Vo=25 Io=10A

Models

  • SCT2080KE SPICE Simulation Evaluation Circuit
  • SCT2080KE SPICE Model
  • SCT2080KE Thermal Model (lib)
  • SCT2080KE PathWave ADS Model
  • How to Create Symbols for PSpice Models

Characteristics Data

  • ESD Data

Packaging & Quality

Package Information

  • Package Dimensions
  • Taping Information
  • Inner Structure
  • Taping Information
  • Moisture Sensitivity Level
  • Anti-Whisker formation
  • Condition of Soldering

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)