SCT2080KE
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
SCT2080KE
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
2nd Gen (Planar)
Drain Current[A]
40
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Features:
・High-speed switching・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction
