SCT2080KEHR
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET for Automotive
SCT2080KEHR
SCT2080KEHR
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET for Automotive
AEC-Q101 qualified automotive grade product. SCT2080KEHR is an SiC (Silicon Carbide) MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Data Sheet
Sample
Product Detail
Part Number | SCT2080KEHRC11
Status |
Recommended
Package |
TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS |
Yes
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
2nd Gen (Planar)
Drain Current[A]
40
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101
