BM60213FV-C
1200 V High Voltage High and Low Side Driver

The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in.

Data Sheet Buy Sample
Data Sheet Buy Sample

Product Detail

 
Part Number | BM60213FV-CE2
Status | Recommended
Package | SSOP-B20W
Unit Quantity | 2000
Minimum Package Quantity | 2000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Automotive

Common Standard

AEC-Q100 (Automotive Grade)

Channel

2

High-side floating supply voltage [V]

1200

Turn-on/off time (Typ.) [ns]

75

Vcc(Min.)[V]

10.0

Vcc(Max.)[V]

24.0

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

125

Package Size [mm]

6.5x8.1 (t=2.01)

Features:

  • AEC-Q100 Qualified(Grade 1)
  • High-Side Floating Supply Voltage 1200 V
  • Under Voltage Lockout Function
  • 3.3 V and 5.0 V Input Logic Compatible

Evaluation
Board

 
    • Evaluation Board
    • BM60213FV-EVK001

    • The BM60213FV-EVK001 board can be driving IGBT Power Devices for High-side and Low-side on Half-Bridge application. The BM60213FV-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at VCCA and VCCB. The BM60213FV-EVK001 allows designers to evaluate Rohm’s Gate Driver family for various applications.

  • User's Guide Buy
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