High ESD Resistance Type Nch 40V 120A Power MOSFET - RJ1G12BGN
RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching.
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Specifications:
Grade
Standard
Package Code
TO-263AB
Package Size[mm]
10.1x15.1 (t=4.7)
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
40
Drain Current ID[A]
120.0
RDS(on)[Ω] VGS=4.5V(Typ.)
0.00154
RDS(on)[Ω] VGS=10V(Typ.)
0.00138
RDS(on)[Ω] VGS=Drive (Typ.)
0.00154
Total gate charge Qg[nC]
82.0
Power Dissipation (PD)[W]
178.0
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4728
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Features:
- Low on - resistance
- High power small mold package(LPTL)
- Pb-free lead plating ; RoHS compliant
- 100% UIS tested