RS6G120BG
Nch 40V 210A, HSOP8, Power MOSFET
RS6G120BG
Nch 40V 210A, HSOP8, Power MOSFET
RS6G120BG is a power MOSFET with low-on resistance and High power package, suitable for switching.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
HSOP8
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
40
Drain Current ID[A]
210
RDS(on)[Ω] VGS=10V(Typ)
0.00103
RDS(on)[Ω] VGS=Drive (Typ)
0.00174
Total gate charge Qg[nC]
34
Power Dissipation (PD)[W]
104
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
6.0x4.9 (t=1.1)
Features:
- Low on - resistance
- High power package (HSOP8)
- Pb-free plating ; RoHS compliant
- Halogen free
- 100% Rg and UIS tested
Supporting Information
Overview
This MOSFET achieves an industry-leading RDS(on) of 2.1mΩ – approx. 50% lower than conventional – by increasing device performance and adopting the HSOP8/HSMT8 package featuring low-resistance copper clip connections. What’s more, improving the element gate structure reduces Qgd, which is generally in a trade-off relationship with RDS(on), by approx. 40% vs conventional products (comparing typical values for RDS(on) and Qgd for 60V HSOP8 package products). These improvements reduce both switching and conduction losses, greatly contributing to higher application efficiency. As an example, when comparing the efficiency of a power supply evaluation board for industrial equipment, this product achieves an industry-leading efficiency of approx. 95% (peak) in the output current range during steady-state operation.
Application Examples
◇ Power supplies for servers and communication base stations
◇ Motors for industrial and consumer products
Also suitable for a variety of power supply circuits and motor-equipped devices
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