ROHM Now Offers the Industry’s Largest Lineup of Automotive-Grade SiC MOSFETs

ROHM Automotive-Grade SiC MOSFETs-TO-247N

ROHM has recently announced the addition of 10 new automotive-grade SiC MOSFETs. The introduction of the SCT3xxxxxHR series allows ROHM to offer the industry's largest lineup of AEC-Q101 qualified SiC MOSFETs that provide the high reliability necessary for automotive on board chargers and DC/DC converters.

In recent years an increasing number of automotive makers are offering electric vehicles in response to growing environmental awareness and rising fuel costs. However, although EVs are becoming more widespread, their relatively short driving range remains problematic. To improve driving distance, batteries are trending towards larger battery capacities with shorter charging times. This, in turn, demands high power and efficiency on board chargers such as 11kW and 22kW, leading to increased adoption of SiC MOSFETs. In addition, higher voltage batteries (800V) require power devices featuring low loss and higher withstand voltages.

To meet these needs, ROHM added 10 new models to its lineup of AEC-Q101 qualified MOSFETs that utilizes a trench gate structure. The result is the industry’s largest portfolio, available in both 650V and 1200V variants. And going forward, ROHM will strive to further improve quality and strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

In December 2010 ROHM was the first in the world to succeed in mass producing SiC MOSFETs and continues to lead the industry in developing and mass producing SiC power devices. Particularly in the automotive market where demand is increasing, ROHM quickly established automotive-grade quality and began supplying SiC Schottky barrier diodes for on board chargers in 2012 and SiC MOSFETs for DC/DC converters and on board chargers from 2017.

Under a corporate objective of ‘Quality First’ established since its founding, ROHM utilizes a vertically integrated production system within the group that infuses superior quality into every process, from development to final testing, while also providing reliability traceability and an optimized supply chain. For SiC power devices as well, an integrated production system that covers everything from wafer fabrication to packaging is used to eliminate ‘black boxes’ during the manufacturing process, ensuring higher reliability, and quality.

Availability: Now

Product Lineup

 
Generation
(Gate Structure)
Part Number VDS (V) ON Resistance
(typ.) (mΩ)
ID (A) PD (W) Operating
Temperature
Range (ºC)
Package Compliant
Standard
3rd Gen
(Trench Gate Structure)
SCT3017ALHRNEW 650 17 118 427 -55ºC to +175ºC TO-247N AEC-Q101
SCT3022ALHRNEW 22 93 339
SCT3030ALHR 30 70 262
SCT3060ALHRNEW 60 39 165
SCT3080ALHRNEW 80 30 134
SCT3120ALHRNEW 120 21 103
SCT3022KLHRNEW 1200 22 95 427
SCT3030KLHRNEW 30 72 339
SCT3040KLHR 40 55 262
SCT3080KLHRNEW 80 31 165
SCT3105KLHRNEW 105 24 134
SCT3160KLHRNEW 160 17 103
2nd Gen
(Planar Gate Structure)
SCT2080KEHR 1200 80 40 262
 

ROHM’s Development History of SiC Power Devices


ROHM's Development History of SiC Power Devices

The ROHM Group’s Vertically Integrated Production System


The ROHM Group’s Vertically Integrated Production System

Automotive Applications


The ROHM Group’s Vertically Integrated Production System