1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive - SCT3040KLHR

AEC-Q101 qualified automotive grade product. SCT3040KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Part Number | SCT3040KLHRC11
Status | Recommended
Package | TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Common Standard

AEC-Q101 (Automotive Grade)

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

40.0

Drain Current[A]

55.0

Total Power Dissipation[W]

262

Junction Temperature(Max.)[℃]

175

Storage Temperature (Min.)[℃]

-55

Storage Temperature (Max.)[℃]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
  • Qualified to AEC-Q101