1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive - SCT3080KLHR
AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
×
Specifications:
Common Standard
AEC-Q101 (Automotive Grade)
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80.0
Drain Current[A]
31.0
Total Power Dissipation[W]
165
Junction Temperature(Max.)[℃]
175
Storage Temperature (Min.)[℃]
-55
Storage Temperature (Max.)[℃]
175
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101