N-channel Silicon Carbide Power MOSFET for Automotive - SCT3080KLHR | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
N-channel Silicon Carbide Power MOSFET for Automotive - SCT3080KLHR (New)
AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
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Specifications:
Common Standard
AEC-Q101
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80.0
Drain Current[A]
31.0
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101