1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3080KL
SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For Automotive usage, please contact Sales.
Drain-source On-state Resistance(Typ.)[mΩ]
Total Power Dissipation[W]
Storage Temperature (Min.)[°C]
Storage Temperature (Max.)[°C]
Features:・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant