Not Recommended for New Designs
SCT3120ALHR
650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3120ALHR
Not Recommended for New Designs
SCT3120ALHR
650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
This product cannot be used for new designs (Not recommended for design diversion).
Product Detail
Part Number | SCT3120ALHRC11
Status |
Not Recommended for New Designs
Package |
TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS |
Yes
Specifications:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
120
Generation
3rd Gen (Trench)
Drain Current[A]
21
Total Power Dissipation[W]
103
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101
