SCT3120AL
650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3120AL
650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
120
Generation
3rd Gen (Trench)
Drain Current[A]
21
Total Power Dissipation[W]
103
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Features:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
