QS5U12
2.5V Drive Nch+SBD MOSFET
QS5U12
2.5V Drive Nch+SBD MOSFET
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-25T
Number of terminal
5
Polarity
Nch+Schottky
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
2
RDS(on)[Ω] VGS=2.5V(Typ)
0.11
RDS(on)[Ω] VGS=4V(Typ)
0.076
RDS(on)[Ω] VGS=4.5V(Typ)
0.071
RDS(on)[Ω] VGS=Drive (Typ)
0.11
Total gate charge Qg[nC]
2.8
Power Dissipation (PD)[W]
0.9
Drive Voltage[V]
2.5
Reverse voltage VR (Diode) [V]
20
Forward Current IF (Diode) [A]
1
Forward Current Surge Peak IFSM (Diode) [A]
3
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.8x2.9 (t=1.0)
Features:
· Multiple Schottky Barrier Diodes Middle Power MOSFET· Small Surface Mount Package
· Pb Free/RoHS Compliant
